Melting induced by epitaxial stress

被引：13

作者：

Bottomley, DJ ^{[1
]}

机构：

[1] Tohoku Univ, Japan Sci & Technol Corp, CREST, Elect Commun Res Inst,Aoba Ku, Sendai, Miyagi 9808577, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1998年 / 37卷 / 5A期

关键词：

epitaxial crystal growth; melting; stress; strain; Gibbs free energy; InAs; InP; InSb; GaAs; GaSb;

D O I：

10.1143/JJAP.37.2652

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

\Unprecedented phenomena observed in the epitaxial growth of certain zincblende structure III-V compounds in the past several years are accounted for on the basis of the melting of the epitaxial layer due to the large magnitude of the epitaxial strain (3.2% to 7.3%). The cases considered include InSb on InAs, GaSb on GaAs, InAs on GaAs and InAs on InP. The molar Gibbs free energy of the stress-free liquid phase is compared with that of the stressed solid film. Melting is predicted for temperatures hundreds of degrees Kelvin lower than the atmospheric pressure melting point. The resulting molten material is an epitaxially stabilized supercooled liquid.

引用

页码：2652 / 2655

页数：4

共 22 条

[1]

Barin I.P.D., 1989, Thermochemical Data of Pure Substances

[2] The physical origin of InAs quantum dots on GaAs(001) [J].