INTERFACE STRUCTURE OF INAS GROWN ON GAAS(001) SURFACES BY MOLECULAR-BEAM EPITAXY

被引：22

作者：

FAWCETT, PN ^{[1
]}

JOYCE, BA ^{[1
]}

ZHANG, X ^{[1
]}

PASHLEY, DW ^{[1
]}

机构：

[1] UNIV LONDON IMPERIAL COLL SCI & TECHNOL,DEPT MAT,LONDON SW7 2BZ,ENGLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1992年 / 116卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(92)90117-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A series of InAs layers has been grown on GaAs(001) surfaces by MBE using a wide range of growth conditions. In all samples, cross-sectional TEM studies of the interface showed the presence of (In,Ga)As protrusions. The formation of these protrusions is thought to be due to the presence of In droplets which form and subsequently react with the GaAs surface during the early stage of deposition.

引用

页码：81 / 86

页数：6

共 10 条

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