TOPOGRAPHIC STUDY ON AN INAS LATTICE-MISMATCHED HETEROEPITAXIAL LAYER GROWN ON GAAS BY MEANS OF X-RAY-SCATTERING RADIOGRAPHY

被引：7

作者：

SUZUKI, Y ^{[1
]}

CHIKAURA, Y ^{[1
]}

AKAZAKI, T ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, MUSASHINO ELECT COMMUN LAB, COMMUN LABS, MUSASHINO, TOKYO 180, JAPAN

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 19期

关键词：

D O I：

10.1063/1.103068

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

X-ray scattering radiography has been successfully applied to an InAs lattice-mismatched heteroepitaxial layer grown on GaAs (001) by molecular beam epitaxy. It was found that the lattice of the epitaxial layer varied the orientation over 18 min in arc around a [100] direction, whereas the substrate has a small lattice bend around [110] by less than 2 min in arc. The bending forms the layer into a concave with a valley along [100]. The independent lattice deformation in two layers comes from a complicated effect of the lattice mismatches and thermal expansion. Also local various structures were observed in the scattering radiographs.

引用

页码：1856 / 1858

页数：3

共 6 条

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