Growth of La2NiO4 thin films by chemical vapor deposition

被引:10
作者
Faucheux, V. [1 ]
Pignard, S. [1 ]
Audier, M. [1 ]
机构
[1] ENS Phys Grenoble, CNRS, UMR 5628, Lab Mat & Genie Phys, F-38402 St Martin Dheres, France
关键词
X-ray diffraction; Chemical vapor deposition processes; Epitaxy; Perovskite-like compounds; Mixed conducting materials;
D O I
10.1016/j.jcrysgro.2004.11.099
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
We report on the synthesis of thin films of layered nickelates La2NiO4 by metalorganic chemical vapor deposition (CVD). Films have been prepared in a low pressure CVD reactor on three different substrates: MgO (1 0 0), LaAlO3 (0 1 2) and SrTiO3 (1 0 0). The influence of the substrate on the crystallinity of the films has been studied using X-ray diffraction in the Bragg-Brentano geometry and using a texture diffractometer. Films present an epitaxial growth on the three kinds of substrates with the (1 1 0) plane of the tetragonal cell of La2NiO4 parallel to the surface of the substrates; two other minority orientations with a- and c-axis perpendicular to the surface are also evidenced. Concerning the in-plane orientation of the epitaxial crystallites, films synthesized on LaAlO3 (0 1 2) present a single orientation; in the case of MgO (1 0 0) and SrTiO3 (1 0 0), another in-plane orientation with crystallites tilted from 45 degrees in the plane of the substrate are also present. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:E947 / E951
页数:5
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