Occurrence of giant current fluctuations in 2D tunnel junction arrays

被引：7

作者：

Cordan, AS ^{[1
]}

机构：

[1] ERM, PHASE, ENSPS, F-67400 Illkirch Graffenstaden, France

来源：

SOLID-STATE ELECTRONICS | 2004年 / 48卷 / 03期

关键词：

single electron devices; tunneling; Coulomb blockade; noise; multi-dot floating gate;

D O I：

10.1016/j.sse.2003.09.010

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Some 2D arrays composed of nanometer-size islands exhibit very large fluctuations in the current responses. The model and numerical toot presented here show that such devices are characterized by a dominant conduction path. In this paper, we explain the origin of this important noise, and suggest a design modification to reduce it. Then the same model is applied to a floating gate array (FG) on top of a tiny channel (FG-MOS). We show that in order to avoid giant current variations in the read process, large tunnel junctions are prerequisite between FG and channel, yet also between dots within the FG, even if the latter process is not correlated to the FG total retention time. (C) 2003 Elsevier Ltd. All rights reserved.

引用

页码：445 / 452

页数：8

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