Lanthanum silicate gate dielectric stacks with subnanometer equivalent oxide thickness utilizing an interfacial silica consumption reaction

A silicate reaction between lanthana and silica layers has been utilized to eliminate interfacial silica in metal-insulator-semiconductor devices and to obtain devices with very low equivalent oxide thickness (EOT). This provides a simple process route to interface elimination, while producing a silicate dielectric with a higher temperature stability of the amorphous phase. The La2O3 layers in this study are deposited by reactive evaporation on (001) Si covered by a similar to 0.8-1.0-nm-thick SiO2 chemical oxide, and are capped in situ with a Ta gate, followed by a reaction anneal, which lowers the EOT from greater than 1.5 nm for the as-deposited bilayer stack to as low as 0.5 nm. Electron energy-loss spectroscopy and medium-energy ion scattering are used to show that a temperature of 400 degrees C is sufficient for the formation of the silicate gate dielectric. Gate leakage currents as low as 0.06 A/cm(2) are obtained for stacks having an EOT of 0.63 nm, orders of magnitude below that of SiO2 having the same EOT value. Electrical breakdown is observed at applied fields above 16 MV/cm.