Decomposition of interfacial SiO2 during HfO2 deposition

被引：48

作者：

Copel, M ^{[1
]}

Reuter, MC ^{[1
]}

机构：

[1] IBM Corp, Div Res, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 16期

关键词：

D O I：

10.1063/1.1621734

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Growth of HfO2 by Hf deposition in an oxidizing ambient is found to cause removal of interfacial SiO2. Medium-energy ion scattering results show that the reaction takes place during growth, and involves transport of oxygen through the HfO2 layer. An examination of the temperature dependence suggests that oxygen vacancy reactions are responsible. (C) 2003 American Institute of Physics.

引用

页码：3398 / 3400

页数：3

共 13 条

[1] Structure and stability of ultrathin zirconium oxide layers on Si(001)
Copel, M
Gribelyuk, M
Gusev, E
[J]. APPLIED PHYSICS LETTERS, 2000, 76 (04) : 436 - 438
[2] Medium-energy ion scattering for analysis of microelectronic materials
Copel, M
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 2000, 44 (04) : 571 - 582
[3] Analysis of interfacial silicates and silicides formed by annealing ultrathin Hf on SiO2:: Effect of Hf/SiO2 thickness ratio
Lee, JH
Ichikawa, M
[J]. JOURNAL OF APPLIED PHYSICS, 2002, 92 (04) : 1929 - 1935
[4] Physicochemical properties of HfO2 in response to rapid thermal anneal
Lysaght, PS
Foran, B
Bersuker, G
Chen, PJJ
Murto, RW
Huff, HR
[J]. APPLIED PHYSICS LETTERS, 2003, 82 (08) : 1266 - 1268
[5] High temperature stability in lanthanum and zirconia-based gate dielectrics
Maria, JP
Wicaksana, D
Kingon, AI
Busch, B
Schulte, H
Garfunkel, E
Gustafsson, T
[J]. JOURNAL OF APPLIED PHYSICS, 2001, 90 (07) : 3476 - 3482
[6] Materials characterization of ZrO2-SiO2 and HfO2-SiO2 binary oxides deposited by chemical solution deposition
Neumayer, DA
Cartier, E
[J]. JOURNAL OF APPLIED PHYSICS, 2001, 90 (04) : 1801 - 1808
[7] Thermal stability of polycrystalline silicon electrodes on ZrO2 gate dielectrics
Perkins, CM
Triplett, BB
McIntyre, PC
Saraswat, KC
Shero, E
[J]. APPLIED PHYSICS LETTERS, 2002, 81 (08) : 1417 - 1419
[8] ZIRCONIUM DIOXIDE THIN-FILMS DEPOSITED BY ALE USING ZIRCONIUM TETRACHLORIDE AS PRECURSOR
RITALA, M
LESKELA, M
[J]. APPLIED SURFACE SCIENCE, 1994, 75 (1-4) : 333 - 340
[9] Chemical vapor deposition of HfO2 films on Si(100)
Sayan, S
Aravamudhan, S
Busch, BW
Schulte, WH
Cosandey, F
Wilk, GD
Gustafsson, T
Garfunkel, E
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2002, 20 (02): : 507 - 512
[10] REACTION OF OXYGEN WITH SI(111) AND (100) - CRITICAL CONDITIONS FOR THE GROWTH OF SIO2
SMITH, FW
GHIDINI, G
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (06) : 1300 - 1306

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