ZIRCONIUM DIOXIDE THIN-FILMS DEPOSITED BY ALE USING ZIRCONIUM TETRACHLORIDE AS PRECURSOR

被引:154
作者
RITALA, M
LESKELA, M
机构
[1] Department of Chemistry, University of Helsinki, SF-00014 Helsinki
关键词
D O I
10.1016/0169-4332(94)90180-5
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
ZrO2 thin films were grown by the atomic layer epitaxy (ALE) technique using ZrCl4 and water as reactants. At 500 degrees C amorphous films with good thickness uniformities were deposited onto soda lime glass substrates. However, rather long pulse and purge times were needed to realize the self-controlled growth. Films were characterized by means of spectrophotometry, RBS, NRA, SEM and AFM.
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页码:333 / 340
页数:8
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