学术探索
学术期刊
新闻热点
数据分析
智能评审

ZIRCONIUM DIOXIDE THIN-FILMS DEPOSITED BY ALE USING ZIRCONIUM TETRACHLORIDE AS PRECURSOR

被引：154
作者：
RITALA, M
LESKELA, M
机构：
[1] Department of Chemistry, University of Helsinki, SF-00014 Helsinki
来源：
APPLIED SURFACE SCIENCE | 1994年 / 75卷 / 1-4期
关键词：
D O I：
10.1016/0169-4332(94)90180-5
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
ZrO2 thin films were grown by the atomic layer epitaxy (ALE) technique using ZrCl4 and water as reactants. At 500 degrees C amorphous films with good thickness uniformities were deposited onto soda lime glass substrates. However, rather long pulse and purge times were needed to realize the self-controlled growth. Films were characterized by means of spectrophotometry, RBS, NRA, SEM and AFM.
引用
收藏
页码：333 / 340
页数：8
相关论文
共 37 条
1234