Anisotropic structural characteristics of (11(2)over-bar0) GaN templates and coalesced epitaxial lateral overgrown films deposited on (10(1)over-bar2) sapphire

被引：162

作者：

Wang, HM ^{[1
]}

Chen, CQ ^{[1
]}

Gong, Z ^{[1
]}

Zhang, JP ^{[1
]}

Gaevski, M ^{[1
]}

Su, M ^{[1
]}

Yang, JW ^{[1
]}

Khan, MA ^{[1
]}

机构：

[1] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 04期

关键词：

D O I：

10.1063/1.1644054

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

a-plane GaN templates and coalesced epitaxial lateral overgrown (ELOG) films on r-plane sapphire substrates were investigated by x-ray diffraction (XRD). The a-plane GaN templates were found to have [0001]-oriented stripe-features, which is related to anisotropic mosaicity. For the mosaic blocks, the mosaicity reached the largest and the smallest values along the [1 (1) over bar 00] and the [0001] directions. The ELOG procedure with the SiO2 mask stripes perpendicular to the [0001] direction limits the preferable growth along this direction, and thereby enhances the [1 (1) over bar 00] growth. This leads to large-area, featureless, a-plane GaN films for which the wing tilt and not the fine mosaic block size becomes the major XRD line-broadening mechanism. (C) 2004 American Institute of Physics.

引用

页码：499 / 501

页数：3

共 11 条

[1] Lateral epitaxial overgrowth of fully coalesced a-plane GaN on r-plane sapphire [J].

Chen, CQ ;

Yang, JW ;

Wang, HM ;

Zhang, JP ;

Adivarahan, V ;

Gaevski, M ;

Kuokstis, E ;

Gong, Z ;

Su, M ;

Khan, MA .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2003, 42 (6B) :L640-L642

[2] GaN homoepitaxy on freestanding (1(1)over-bar00) oriented GaN substrates [J].

Chen, CQ ;

Gaevski, ME ;

Sun, WH ;

Kuokstis, E ;

Zhang, JP ;

Fareed, RSQ ;

Wang, HM ;

Yang, JW ;

Simin, G ;

Khan, MA ;

Maruska, HP ;

Hill, DW ;

Chou, MMC ;

Chai, B .

APPLIED PHYSICS LETTERS, 2002, 81 (17) :3194-3196

[3] Determination of crystal misorientation in epitaxial lateral overgrowth of GaN [J].

Chen, WM ;

McNally, PJ ;

Jacobs, K ;

Tuomi, T ;

Danilewsky, AN ;

Zytkiewicz, ZR ;

Lowney, D ;

Kanatharana, J ;

Knuuttila, L ;

Riikonen, J .

JOURNAL OF CRYSTAL GROWTH, 2002, 243 (01) :94-102

[4]

Chierchia R, 2001, PHYS STATUS SOLIDI B, V228, P403, DOI 10.1002/1521-3951(200111)228:2<403::AID-PSSB403>3.0.CO

[5]

2-5

[6] Threading dislocation reduction via laterally overgrown nonpolar (11(2)over-bar0) a-plane GaN [J].

Craven, MD ;

Lim, SH ;

Wu, F ;

Speck, JS ;

DenBaars, SP .

APPLIED PHYSICS LETTERS, 2002, 81 (07) :1201-1203

[7] Structural characterization of nonpolar (11(2)over-bar0) a-plane GaN thin films grown on (1(1)over-bar02) r-plane sapphire [J].

Craven, MD ;

Lim, SH ;

Wu, F ;

Speck, JS ;

DenBaars, SP .

APPLIED PHYSICS LETTERS, 2002, 81 (03) :469-471

[8] Determination of tilt in the lateral epitaxial overgrowth of GaN using X-ray diffraction [J].

Fini, P ;

Marchand, H ;

Ibbetson, JP ;

DenBaars, SP ;

Mishra, UK ;

Speck, JS .

JOURNAL OF CRYSTAL GROWTH, 2000, 209 (04) :581-590

[9] Molecular-beam epitaxy of GaN/AlxGa1-xN multiple quantum wells on R-plane (10(1)over-bar-2) sapphire substrates [J].

Ng, HM .

APPLIED PHYSICS LETTERS, 2002, 80 (23) :4369-4371

[10] Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes [J].

Waltereit, P ;

Brandt, O ;

Trampert, A ;

Grahn, HT ;

Menniger, J ;

Ramsteiner, M ;

Reiche, M ;

Ploog, KH .

NATURE, 2000, 406 (6798) :865-868

← 1 2 →