Gauge field induced by ripples in graphene

被引：211

作者：

Guinea, F. ^{[1
]}

Horovitz, Baruch ^{[2
]}

Le Doussal, P. ^{[3
]}

机构：

[1] CSIC, Inst Ciencia Mat Madrid, E-28049 Madrid, Spain

[2] Ben Gurion Univ Negev, Dept Phys, IL-84105 Beer Sheva, Israel

[3] Ecole Normale Super, CNRS, Phys Theor Lab, F-75231 Paris, France

来源：

PHYSICAL REVIEW B | 2008年 / 77卷 / 20期

关键词：

D O I：

10.1103/PhysRevB.77.205421

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We study the effects of quenched height fluctuations (ripples) in graphene on the density of states (DOS). We show that at strong ripple disorder, a divergence in the DOS can lead to an ordered ground state. We also discuss the formation of dislocations in corrugated systems, buckling effects in suspended samples, and the changes in the Landau levels due to the interplay between a real magnetic field and the gauge potential induced by ripples.

引用

页数：8

共 52 条

[1] FLUCTUATIONS AND LOWER CRITICAL DIMENSIONS OF CRYSTALLINE MEMBRANES [J].