Evolution of the Raman spectra from single-, few-, and many-layer graphene with increasing disorder

被引：670

作者：

Martins Ferreira, E. H. ^{[1
]}

Moutinho, Marcus V. O. ^{[2
]}

Stavale, F. ^{[1
]}

Lucchese, M. M. ^{[1
,3
]}

Capaz, Rodrigo B. ^{[1
,2
]}

Achete, C. A. ^{[1
,4
]}

Jorio, A. ^{[1
,5
]}

机构：

[1] Inst Nacl Metrol Normalizacao & Qualidade Ind INM, Div Mat Metrol, BR-25250020 Duque De Caxias, RJ, Brazil

[2] Univ Fed Rio de Janeiro, Inst Fis, BR-21941972 Rio De Janeiro, Brazil

[3] Univ Fed Pampa, Ctr Ciencias Exatas & Tecnol, Bage, RS, Brazil

[4] Univ Fed Rio de Janeiro, PEMM, BR-21945970 Rio De Janeiro, Brazil

[5] Univ Fed Minas Gerais, Dept Fis, BR-30123970 Belo Horizonte, MG, Brazil

来源：

PHYSICAL REVIEW B | 2010年 / 82卷 / 12期

关键词：

GRAPHITE; SPECTROSCOPY; SCATTERING; NANOTUBES; ELECTRON; DEFECTS; FILMS;

D O I：

10.1103/PhysRevB.82.125429

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on the micro-Raman spectroscopy of monolayer, bilayer, trilayer, and many layers of graphene (graphite) bombarded by low-energy argon ions with different doses. The evolution of peak frequencies, intensities, linewidths, and areas of the main Raman bands of graphene is analyzed as function of the distance between defects and number of layers. We describe the disorder-induced frequency shifts and the increase in the linewidth of the Raman bands by means of a spatial-correlation model. Also, the evolution of the relative areas A(D)/A(G), A(D')/A(G), and A(G')/A(G) is described by a phenomenological model. The present results can be used to fully characterize disorder in graphene systems.

引用

页数：9

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