Pulse number dependence of laser-induced periodic surface structures for femtosecond laser irradiation of silicon

被引:360
作者
Bonse, Joern [1 ]
Krueger, Joerg [1 ]
机构
[1] BAM Bundesanstalt Mat & Prufung, D-12205 Berlin, Germany
关键词
antiferromagnetic materials; cobalt compounds; crystal microstructure; nanostructured materials; paramagnetic materials; semimagnetic semiconductors; zinc compounds; SEMICONDUCTORS; ABLATION; MODES;
D O I
10.1063/1.3456501
中图分类号
O59 [应用物理学];
学科分类号
070305 [高分子化学与物理];
摘要
The formation of nearly wavelength-sized laser-induced periodic surface structures (LIPSS) on single-crystalline silicon upon irradiation with single (N=1) and multiple (N <= 1000) linearly polarized femtosecond (fs) laser pulses (pulse duration tau=130 fs, central wavelength lambda=800 nm) in air is studied experimentally. Scanning electron microscopy (SEM) and optical microscopy are used for imaging of the ablated surface morphologies, both revealing LIPSS with periodicities close to the laser wavelength and an orientation always perpendicular to the polarization of the fs-laser beam. It is experimentally demonstrated that these LIPSS can be formed in silicon upon irradiation by single fs-laser pulses-a result that is additionally supported by a recent theoretical model. Two-dimensional Fourier transforms of the SEM images allow the detailed analysis of the distribution of the spatial frequencies of the LIPSS and indicate, at a fixed peak fluence, a monotonous decrease in their mean spatial period between similar to 770 nm (N=1) and 560 nm (N=1000). The characteristic decrease in the LIPSS period is caused by a feedback-mechanism acting upon excitation of surface plasmon polaritons at the rough silicon surface which is developing under the action of multiple pulses into a periodically corrugated surface. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3456501]
引用
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页数:5
相关论文
共 21 条
[1]
All-optical characterization of single femtosecond laser-pulse-induced amorphization in silicon [J].
Bonse, J. .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2006, 84 (1-2) :63-66
[2]
Structure formation on the surface of indium phosphide irradiated by femtosecond laser pulses [J].
Bonse, J ;
Munz, M ;
Sturm, H .
JOURNAL OF APPLIED PHYSICS, 2005, 97 (01)
[3]
Modifying single-crystalline silicon by femtosecond laser pulses: an analysis by micro Raman spectroscopy, scanning laser microscopy and atomic force microscopy [J].
Bonse, J ;
Brzezinka, KW ;
Meixner, AJ .
APPLIED SURFACE SCIENCE, 2004, 221 (1-4) :215-230
[4]
Femtosecond laser ablation of silicon-modification thresholds and morphology [J].
Bonse, J ;
Baudach, S ;
Krüger, J ;
Kautek, W ;
Lenzner, M .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2002, 74 (01) :19-25
[5]
Chemical, morphological and accumulation phenomena in ultrashort-pulse laser ablation of TiN in air [J].
Bonse, J ;
Sturm, H ;
Schmidt, D ;
Kautek, W .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2000, 71 (06) :657-665
[6]
On the role of surface plasmon polaritons in the formation of laser-induced periodic surface structures upon irradiation of silicon by femtosecond-laser pulses [J].
Bonse, Joern ;
Rosenfeld, Arkadi ;
Krueger, Joerg .
JOURNAL OF APPLIED PHYSICS, 2009, 106 (10)
[7]
Sub-damage-threshold femtosecond laser ablation from crystalline Si: surface nanostructures and phase transformation [J].
Costache, F ;
Kouteva-Arguirova, S ;
Reif, J .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2004, 79 (4-6) :1429-1432
[8]
Sub-wavelength surface structures on silicon irradiated by femtosecond laser pulses at 1300 and 2100 nm wavelengths [J].
Crawford, T. H. R. ;
Haugen, H. K. .
APPLIED SURFACE SCIENCE, 2007, 253 (11) :4970-4977
[9]
Femtosecond laser interaction with silicon under water confinement [J].
Daminelli, G ;
Krüger, J ;
Kautek, W .
THIN SOLID FILMS, 2004, 467 (1-2) :334-341
[10]
Femtosecond laser-induced periodic surface structures revisited: A comparative study on ZnO [J].
Dufft, D. ;
Rosenfeld, A. ;
Das, S. K. ;
Grunwald, R. ;
Bonse, J. .
JOURNAL OF APPLIED PHYSICS, 2009, 105 (03)