Effects of steps and defects on O2 dissociation on clean and modified Cu(100)

被引：16

作者：

Hirsimäki, M ^{[1
]}

Chorkendoff, I ^{[1
]}

机构：

[1] Tech Univ Denmark, ICAT, Dept Phys, Dept Chem Engn, DK-2800 Lyngby, Denmark

来源：

SURFACE SCIENCE | 2003年 / 538卷 / 03期

基金：

芬兰科学院;

关键词：

copper; alloys; oxygen; silver; sulphur; chemisorption; surface defects; Auger electron spectroscopy;

D O I：

10.1016/S0039-6028(03)00816-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Dissociative chemisorption of O-2 on Cu(100), S/Cu(100) and Ag/Cu(100) surface alloy has been investigated by Auger electron spectroscopy (AES). A strong reduction in the initial O-2 chemisorption probability (S-0) from 0.05 to 7.4 x 10(-3) is observed already at an Ag coverage of 0.02 ML. Further Ag deposition results only in a moderate decrease in So. Similar inhibition of O-2 dissociation is observed on S/Cu(100). It is concluded that at very low Ag coverages, the reduced reactivity of Ag/Cu(100) towards O-2 dissociation is primarily due to the steric blocking of the surface defects and that any electronic effects are only secondary and present only at higher Ag coverages. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：233 / 239

页数：7

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