Metamorphic HFETs on GaAs with InP-subchannels for device performance improvements

被引：6

作者：

Gässler, C ^{[1
]}

Ziegler, V ^{[1
]}

Wölk, C ^{[1
]}

Deufel, R ^{[1
]}

Berlec, FJ ^{[1
]}

Käb, N ^{[1
]}

Kohn, E ^{[1
]}

机构：

[1] DaimlerChrysler AG, Res Ctr, D-89081 Ulm, Germany

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST | 2000年

关键词：

D O I：

10.1109/IEDM.2000.904288

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports on 43 %-In metamorphic HFETs on GaAs with an InP-subchannel. To our knowledge, this is the first time that InP-subchannels have been used in metamorphic HFETs, The used gate length is 150nm. The composite-channel of the devices was designed to overcome the high impact ionization rate in InGaAs while maintaining the very high mobility for a low turnon resistance. The devices show excellent RF-Performance: f(max) = 300 GHz and f(t) = 188 GHz. DC-performance: I-DS,I-max = 625 mA/mm with transconductance g(max) = 850 ms/mm.

引用

页码：182 / 185

页数：4

共 6 条

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2000 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2000, :341-344

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