Laterally structured ZnCdSe/ZnSe superlattices by diffusion induced disordering

Thermally induced disordering of ZnCdSe/ZnSe superlattices was studied by secondary-ion-mass-spectroscopy and cathodoluminescence. The structures were grown by molecular beam epitaxy and annealed in Zn, H-2, Or Se atmosphere. In Zn atmosphere the superlattice was found to be stable up to 500 degrees C, whereas a heat treatment in H-2 and Se atmosphere leads to a complete intermixing at temperatures of 450 and 430 degrees C, respectively. A Si3N4 Stripe was used to protect the superlattice locally from the annealing atmosphere and to achieve a laterally structured intermixing. The disordering area is controlled to better than 600 nm. (C) 1996 American Institute of Physics.