Charge collection and radiation hardness of a SOI microdosimeter for medical and space applications

被引：46

作者：

Bradley, PD ^{[1
]}

Rosenfeld, AB

Lee, KK

Jamieson, DN

Heiser, G

Satoh, S

机构：

[1] Univ Wollongong, Dept Engn Phys, Wollongong, NSW 2522, Australia

[2] Univ Melbourne, Dept Phys, Microanalyt Res Ctr, Melbourne, Vic 3052, Australia

[3] Univ New S Wales, Dept Comp Sci & Engn, Sydney, NSW 2052, Australia

[4] Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1998年 / 45卷 / 06期

基金：

英国医学研究理事会;

关键词：

D O I：

10.1109/23.736518

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The first results obtained using a SOI device for microdosimetry applications are presented. Microbeam and broadbeam spectroscopy methods are used for determining minority carrier lifetime and radiation damage constants. A spectroscopy model is presented which includes the majority of effects that impact spectral resolution. Charge collection statistics were found to substantially affect spectral resolution. Lateral diffusion effects significantly complicate charge collection.

引用

页码：2700 / 2710

页数：11

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