The effect of the angle of incidence on proton induced single events in devices - A critical assessment by modeling

被引:13
作者
Akkerman, A [1 ]
Barak, J [1 ]
Levinson, J [1 ]
Lifshitz, Y [1 ]
机构
[1] Soreq NRC, IL-81800 Yavne, Israel
关键词
D O I
10.1109/23.685249
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The effect of the angle of incidence on the proton induced single events in devices with finite dimensions is studied using a modified Monte Carlo model. The physical reasons for the existence or the absence of an anisotropy of the single event occurrence (with respect to the proton angle of incidence) are highlighted for the first time. Several different cases are found: (1) A significant anisotropy is predicted for devices with small lateral dimensions, a smaller sensitive layer thickness, and a large critical energy. The origin of this angular dependence is shown to be the contribution of the highly anisotropic medium mass fragments which is dominant for these conditions. (2) Published experimental data indicate only a small anisotropy in practical devices, which are characterized by a small critical deposited energy needed for SEU. It is shown that for these devices, most of the charge is created by the heavy mass fragments, which are isotropic. (3) In surface barrier detectors (SBDs) which have large lateral dimensions the effect of the isotropic light mass fragments takes over and the anisotropy for proton events is small even for large critical energies and a small sensitive layer thickness. The conclusion of the present work is that the single event rate in space can be evaluated by the normal incidence cross sections for all devices which have a significant sensitivity for proton induced events.
引用
收藏
页码:1617 / 1623
页数:7
相关论文
共 14 条
[1]   Modeling of proton induced SEUs [J].
Akkerman, A ;
Barak, J ;
Levinson, J ;
Lifshitz, Y .
RADIATION PHYSICS AND CHEMISTRY, 1996, 48 (01) :11-22
[2]   A MICROSCOPIC MODEL OF ENERGY DEPOSITION IN SILICON SLABS EXPOSED TO HIGH-ENERGY PROTONS [J].
AZZIZ, N ;
TANG, HHK ;
SRINIVASAN, GR .
JOURNAL OF APPLIED PHYSICS, 1987, 62 (02) :414-418
[3]   Dynamic single event effects in a CMOS/thick SOI shift register. [J].
Gardic, F ;
Flament, O ;
Musseau, O ;
Brisset, C ;
Martinez, M ;
Brunet, JP ;
Blanquart, L .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1996, 43 (03) :960-966
[4]  
GARDIC F, 1996, THESIS U P M CURIE P
[5]   ENERGY DEPOSITION IN INTERMEDIATE-ENERGY NUCLEON-NUCLEUS COLLISIONS [J].
KWIATKOWSKI, K ;
ZHOU, SH ;
WARD, TE ;
VIOLA, VE ;
BREUER, H ;
MATHEWS, GJ ;
GOKMEN, A ;
MIGNEREY, AC .
PHYSICAL REVIEW LETTERS, 1983, 50 (21) :1648-1651
[6]   ON THE ANGULAR-DEPENDENCE OF PROTON-INDUCED EVENTS AND CHARGE COLLECTION [J].
LEVINSON, J ;
BARAK, J ;
ZENTNER, A ;
AKKERMAN, A ;
LIFSHITZ, Y ;
VICTORIA, M ;
HAJDAS, W ;
ALURRALDE, M .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1994, 41 (06) :2098-2102
[7]   Single-event effects in SOI technologies and devices [J].
Musseau, O .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1996, 43 (02) :603-613
[8]   Effects of geometry on the proton SEU dependence on the angle of incidence [J].
Reed, RA ;
McNulty, PJ .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1995, 42 (06) :1803-1808
[9]   IMPLICATIONS OF ANGLE OF INCIDENCE IN SEU TESTING OF MODERN CIRCUITS [J].
REED, RA ;
MCNULTY, PJ ;
ABDELKADER, WG .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1994, 41 (06) :2049-2054
[10]   ESTIMATION OF PROTON UPSET RATES FROM HEAVY-ION TEST DATA [J].
ROLLINS, JG .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1990, 37 (06) :1961-1965