Low temperature growth of vertically aligned carbon nanotubes by thermal chemical vapor deposition

被引：38

作者：

Lee, CJ ^{[1
]}

Son, KH

Park, J

Yoo, JE

Huh, Y

Lee, JY

机构：

[1] Kunsan Natl Univ, Sch Elect Engn, Kunsan 573701, South Korea

[2] Korea Univ, Dept Chem, Jochiwon 339700, South Korea

[3] Iljin Nanotech Co Ltd, Seoul 57810, South Korea

[4] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea

来源：

CHEMICAL PHYSICS LETTERS | 2001年 / 338卷 / 2-3期

关键词：

D O I：

10.1016/S0009-2614(00)01378-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Vertically well-aligned carbon nanotubes (CNTs) are grown on Fe-deposited silicon oxide substrate at 550 degreesC by thermal chemical vapor deposition of C2H2 gas. We employed two-stage heating technique that the reactants heated at 850 degreesC in the first zone flow into the second zone maintained at 550 degreesC for CNT growth. The CNTs have bamboo structure, closed tip, and defective graphite sheets. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：113 / 117

页数：5

共 16 条

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