Selective growth of InAlAs by low pressure metalorganic vapor phase epitaxy

被引：14

作者：

Tsuji, M

Makita, K

Takeuchi, T

Taguchi, K

机构：

[1] Opto-Electronics Res. Laboratories, NEC Corporation, Tsukuba, Ibaraki 305

来源：

JOURNAL OF CRYSTAL GROWTH | 1996年 / 162卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(95)00947-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

InalAs selective growth on a masked planar InP substrate with patterned Si0(2) has been studied with low-pressure metalorganic vapor phase epitaxy. No polycrystals were observed on the 10 x 200 mu m square mask stripes at a growth temperature of 650 degrees C and a growth rate of 0.6 mu m/h. A bandgap energy shift and growth-rate enhancement were confirmed in growth regions between the pair of Si0(2) masks. In a double hetero-structure consisting of selectively grown In0.52Al0.48As/In0.53Ga0.47As multi-quantum well (MQW) active layers and In0.52Al0.48As cladding layers, a bright photoluminescence (PL) spectrum from the selectively grown MQW layer was obtained for the first time.

引用

页码：25 / 30

页数：6

共 19 条

[1] NOVEL STRUCTURE MQW ELECTROABSORPTION MODULATOR DFB-LASER INTEGRATED DEVICE FABRICATED BY SELECTIVE AREA MOCVD GROWTH [J].