Nanoparticle derived Cu(In, Ga)Se2 absorber layer for thin film solar cells

被引：35

作者：

Ahn, SeJin ^{[1
]}

Kim, KiHyun ^{[2
]}

Yoon, KyungHoon ^{[1
]}

机构：

[1] Korea Atom Energy Res Inst, Photovolta Res Grp, Taejon 305343, South Korea

[2] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea

来源：

COLLOIDS AND SURFACES A-PHYSICOCHEMICAL AND ENGINEERING ASPECTS | 2008年 / 313卷

关键词：

solar cell; thin film; nanoparticle; CIGS;

D O I：

10.1016/j.colsurfa.2007.04.089

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A non-vacuum process for fabrication of Cu(In, Ga)Se-2 (CIGS) absorber layer from the corresponding nanoparticle precursors was described. CIGS nanoparticle precursors was prepared by a low temperature colloidal route by reacting the starting materials (CuI, InI3, GaI3 and Na2Se) in organic solvents, by which fine CIGS nanoparticles of about 20 nm in diameter with chemical composition of Cu0.9In0.64Ga0.23Se2.00 were obtained. The nanoparticle precursors were mixed with organic binder material for the theology of the mixture to be adjusted for the doctor blade method. After depositing the mixture of CIGS with binder on Mo/glass substrate, the samples were preheated on the hot plate in air to evaporate remaining solvents and to burn the organic binder material. Subsequently, the resultant (porous) CIGS/Mo/glass sample was selenized in a two-zone Rapid Thermal Process (RTP) furnace in order to get a solar cell applicable dense CIGS absorber layer. The selenization at 550 degrees C for 15 min with Se gas evaporated at 400 degrees C resulted in the growth of CIGS particles up to a few hundred nanometers in grain size in the upper parts of the layer with remaining unreacted small particles in the lower parts. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：171 / 174

页数：4

共 7 条

[1] Nucleation and growth of Cu(In,Ga)Se2 nanoparticles in low temperature colloidal process [J].

Ahn, SeJin ;

Kim, KiHyun ;

Chun, YoungGab ;

Yoon, KyungHoon .

THIN SOLID FILMS, 2007, 515 (7-8) :4036-4040

[2]

AHN SJ, SOL ENERGY MAT SOL C

[3] Diode (characteristics in state-of-the-art ZnO/CdS/Cu(In1-xGax)Se2 solar cells [J].

Contreras, MA ;

Ramanathan, K ;

AbuShama, J ;

Hasoon, F ;

Young, DL ;

Egaas, B ;

Noufi, R .

PROGRESS IN PHOTOVOLTAICS, 2005, 13 (03) :209-216

[4] Non-vacuum processing of CIGS solar cells [J].

Eberspacher, C ;

Pauls, K ;

Serra, J .

CONFERENCE RECORD OF THE TWENTY-NINTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 2002, 2002, :684-687

[5] Low-cost CIGS solar cells by paste coating and selenization [J].

Kaelin, M ;

Rudmann, D ;

Kurdesau, F ;

Zogg, H ;

Meyer, T ;

Tiwari, AN .

THIN SOLID FILMS, 2005, 480 :486-490

[6] Non-vacuum processing of CuIn1-xGaxSe2 solar cells on rigid and flexible substrates using nanoparticle precursor inks [J].

Kapur, VK ;

Bansal, A ;

Le, P ;

Asensio, OI .

THIN SOLID FILMS, 2003, 431 :53-57

[7] Cu-In-Ga-Se nanoparticle colloids as spray deposition precursors for Cu(In,Ga)Se2 solar cell materials [J].

Schulz, DL ;

Curtis, CJ ;

Flitton, RA ;

Wiesner, H ;

Keane, J ;

Matson, RJ ;

Jones, KM ;

Parilla, PA ;

Noufi, R ;

Ginley, DS .

JOURNAL OF ELECTRONIC MATERIALS, 1998, 27 (05) :433-437

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