The fabrication of thin GaAs cantilever beams for power sensor microsystem using RIE

被引：16

作者：

Hascik, S

Lalinsky, T

Kuzmik, J

Porges, M

Mozolova, Z

机构：

[1] Institute of Electrical Engineering, Slovak Academy of Sciences, 842 39 Bratislava

来源：

VACUUM | 1996年 / 47卷 / 10期

关键词：

D O I：

10.1016/0042-207X(96)00129-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A method of fabricating two independent thin GaAs cantilever beams using a bulk micromachining technology based on RIE has been developed. The principle of the method is outlined and results of a three-dimensional patterning of the cantilever beams successfully applied in a power sensor microsystem development are described. Copyright (C) 1996 Elsevier Science Ltd

引用

页码：1215 / 1217

页数：3