Interface structure and phase of epitaxial SrTiO3 (110) thin films grown directly on silicon -: art. no. 131908

被引:48
作者
Hao, JH
Gao, J
Wang, Z
Yu, DP
机构
[1] Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
[2] Peking Univ, Sch Phys, Electron Microscopy Lab, Beijing 100871, Peoples R China
关键词
D O I
10.1063/1.2061859
中图分类号
O59 [应用物理学];
学科分类号
摘要
The interface structure and phase between SrTiO3 (110) on Si (100) have been investigated using high-resolution transmission electron microscopy and x-ray photoelectron spectroscopy. The SrTiO3/Si interface was found to be epitaxially crystallized without any amorphous oxide layer. The formation of Sr silicate at the interface was suggested by considering the fact of the core-level spectra of the Si 2p, O 1s, and Sr 3d. Our results suggest that the presence of a coincident site lattice at the interface between Si and a Sr silicate and/or SrTiO3 may help to stabilize SrTiO3 in the epitaxial orientation reported in the work. (C) 2005 American Institute of Physics.
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页码:1 / 3
页数:3
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