GaP/GaAsP/GaP core-multishell nanowire heterostructures on (111) silicon

被引：57

作者：

Mohseni, P. K.

Maunders, C.

Botton, G. A.

LaPierre, R. R. ^{[1
]}

机构：

[1] McMaster Univ, Dept Engn Phys, Ctr Emerging Device Technol, Hamilton, ON L8S 4L7, Canada

[2] McMaster Univ, Canadian Ctr Electron Microscopy, Hamilton, ON L8S 4L7, Canada

[3] McMaster Univ, Dept Mat Sci & Engn, Hamilton, ON L8S 4L7, Canada

来源：

NANOTECHNOLOGY | 2007年 / 18卷 / 44期

关键词：

D O I：

10.1088/0957-4484/18/44/445304

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

GaP/GaAsP/GaP segmented nanowires were grown by gas source molecular beam epitaxy on silicon (111) substrates. The nanowires were grown by the vapour-liquid-solid process using Au nanoparticles. Transmission electron microscopy and energy dispersive x-ray spectroscopy indicated that the wires had wurtzite crystal structure with a core-multishell heterostructure. Stacking faults along the wire were removed after the growth-interrupted interfaces, indicating the potential for defect-free nanowires.

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页数：6

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