Onset of stacking faults in InP nanowires grown by gas source molecular beam epitaxy

被引：35

作者：

Cornet, D. M. ^{[1
]}

Mazzetti, V. G. M. ^{[1
]}

LaPierre, R. R. ^{[1
]}

机构：

[1] McMaster Univ, Ctr Emerging Device Technol, Hamilton, ON L8S 4L7, Canada

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 01期

基金：

加拿大自然科学与工程研究理事会;

关键词：

D O I：

10.1063/1.2429955

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InP nanowires (NWs) were grown by gas source molecular beam epitaxy on InP (111)B substrates, using Au nanoparticles as a growth catalyst. The rod-shaped NWs exhibited hexagonal sidewall facets oriented along the {-211} family of crystal planes for all NW diameters, indicating minimal sidewall growth. Stacking faults, when present, were concentrated near the NW tips, while NWs with lengths less than 300 nm were completely free of stacking faults. (c) 2007 American Institute of Physics.

引用

页数：3

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