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Influence of nanowire density on the shape and optical properties of ternary InGaAs nanowires
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作者:

Kim, Y
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机构: Australian Natl Univ, Res Sch Phys Sci & Engn, Dept Elect Mat Engn, Canberra, ACT 0200, Australia

Joyce, HJ
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机构: Australian Natl Univ, Res Sch Phys Sci & Engn, Dept Elect Mat Engn, Canberra, ACT 0200, Australia

Gao, O
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机构: Australian Natl Univ, Res Sch Phys Sci & Engn, Dept Elect Mat Engn, Canberra, ACT 0200, Australia

Tan, HH
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机构: Australian Natl Univ, Res Sch Phys Sci & Engn, Dept Elect Mat Engn, Canberra, ACT 0200, Australia

Jagadish, C
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机构:
Australian Natl Univ, Res Sch Phys Sci & Engn, Dept Elect Mat Engn, Canberra, ACT 0200, Australia Australian Natl Univ, Res Sch Phys Sci & Engn, Dept Elect Mat Engn, Canberra, ACT 0200, Australia

Paladugu, M
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机构: Australian Natl Univ, Res Sch Phys Sci & Engn, Dept Elect Mat Engn, Canberra, ACT 0200, Australia

Zou, J
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机构: Australian Natl Univ, Res Sch Phys Sci & Engn, Dept Elect Mat Engn, Canberra, ACT 0200, Australia

Suvorova, AA
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机构: Australian Natl Univ, Res Sch Phys Sci & Engn, Dept Elect Mat Engn, Canberra, ACT 0200, Australia
机构:
[1] Australian Natl Univ, Res Sch Phys Sci & Engn, Dept Elect Mat Engn, Canberra, ACT 0200, Australia
[2] Dong A Univ, Dept Phys, Pusan 604714, South Korea
[3] Univ Queensland, Sch Engn, Brisbane, Qld 4072, Australia
[4] Univ Queensland, Ctr Microscopy & Microanal, Brisbane, Qld 4072, Australia
[5] Univ Western Australia, Ctr Microscopy & Microanal, Crawley, WA 6009, Australia
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D O I:
10.1021/nl052189o
中图分类号:
O6 [化学];
学科分类号:
0703 ;
摘要:
We have synthesized ternary InGaAs nanowires on (111)B GaAs surfaces by metal-organic chemical vapor deposition. Au colloidal nanoparticles were employed to catalyze nanowire growth. We observed the strong influence of nanowire density on nanowire height, tapering, and base shape specific to the nanowires with high In composition. This dependency was attributed to the large difference of diffusion length on (111)B surfaces between In and Ga reaction species, with In being the more mobile species. Energy dispersive X-ray spectroscopy analysis together with high-resolution electron microscopy study of individual InGaAs nanowires shows large In/Ga compositional variation along the nanowire supporting the present diffusion model. Photoluminescence spectra exhibit a red shift with decreasing nanowire density due to the higher degree of In incorporation in more sparsely distributed InGaAs nanowires.
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页码:599 / 604
页数:6
相关论文
共 23 条
[1]
Epitaxial growth of InP nanowires on germanium
[J].
Bakkers, EPAM
;
Van Dam, JA
;
De Franceschi, S
;
Kouwenhoven, LP
;
Kaiser, M
;
Verheijen, M
;
Wondergem, H
;
Van der Sluis, P
.
NATURE MATERIALS,
2004, 3 (11)
:769-773

Bakkers, EPAM
论文数: 0 引用数: 0
h-index: 0
机构: Philips Res Labs, NL-5656 AA Eindhoven, Netherlands

Van Dam, JA
论文数: 0 引用数: 0
h-index: 0
机构: Philips Res Labs, NL-5656 AA Eindhoven, Netherlands

De Franceschi, S
论文数: 0 引用数: 0
h-index: 0
机构: Philips Res Labs, NL-5656 AA Eindhoven, Netherlands

Kouwenhoven, LP
论文数: 0 引用数: 0
h-index: 0
机构: Philips Res Labs, NL-5656 AA Eindhoven, Netherlands

Kaiser, M
论文数: 0 引用数: 0
h-index: 0
机构: Philips Res Labs, NL-5656 AA Eindhoven, Netherlands

Verheijen, M
论文数: 0 引用数: 0
h-index: 0
机构: Philips Res Labs, NL-5656 AA Eindhoven, Netherlands

Wondergem, H
论文数: 0 引用数: 0
h-index: 0
机构: Philips Res Labs, NL-5656 AA Eindhoven, Netherlands

Van der Sluis, P
论文数: 0 引用数: 0
h-index: 0
机构: Philips Res Labs, NL-5656 AA Eindhoven, Netherlands
[2]
Nanowire resonant tunneling diodes
[J].
Björk, MT
;
Ohlsson, BJ
;
Thelander, C
;
Persson, AI
;
Deppert, K
;
Wallenberg, LR
;
Samuelson, L
.
APPLIED PHYSICS LETTERS,
2002, 81 (23)
:4458-4460

Björk, MT
论文数: 0 引用数: 0
h-index: 0
机构: Lund Univ, Solid State Phys Nanometer Consortium, S-22100 Lund, Sweden

Ohlsson, BJ
论文数: 0 引用数: 0
h-index: 0
机构: Lund Univ, Solid State Phys Nanometer Consortium, S-22100 Lund, Sweden

Thelander, C
论文数: 0 引用数: 0
h-index: 0
机构: Lund Univ, Solid State Phys Nanometer Consortium, S-22100 Lund, Sweden

Persson, AI
论文数: 0 引用数: 0
h-index: 0
机构: Lund Univ, Solid State Phys Nanometer Consortium, S-22100 Lund, Sweden

Deppert, K
论文数: 0 引用数: 0
h-index: 0
机构: Lund Univ, Solid State Phys Nanometer Consortium, S-22100 Lund, Sweden

Wallenberg, LR
论文数: 0 引用数: 0
h-index: 0
机构: Lund Univ, Solid State Phys Nanometer Consortium, S-22100 Lund, Sweden

Samuelson, L
论文数: 0 引用数: 0
h-index: 0
机构: Lund Univ, Solid State Phys Nanometer Consortium, S-22100 Lund, Sweden
[3]
Diameter-controlled synthesis of single-crystal silicon nanowires
[J].
Cui, Y
;
Lauhon, LJ
;
Gudiksen, MS
;
Wang, JF
;
Lieber, CM
.
APPLIED PHYSICS LETTERS,
2001, 78 (15)
:2214-2216

Cui, Y
论文数: 0 引用数: 0
h-index: 0
机构:
Harvard Univ, Dept Chem & Biol Chem, Cambridge, MA 02138 USA Harvard Univ, Dept Chem & Biol Chem, Cambridge, MA 02138 USA

Lauhon, LJ
论文数: 0 引用数: 0
h-index: 0
机构:
Harvard Univ, Dept Chem & Biol Chem, Cambridge, MA 02138 USA Harvard Univ, Dept Chem & Biol Chem, Cambridge, MA 02138 USA

Gudiksen, MS
论文数: 0 引用数: 0
h-index: 0
机构:
Harvard Univ, Dept Chem & Biol Chem, Cambridge, MA 02138 USA Harvard Univ, Dept Chem & Biol Chem, Cambridge, MA 02138 USA

Wang, JF
论文数: 0 引用数: 0
h-index: 0
机构:
Harvard Univ, Dept Chem & Biol Chem, Cambridge, MA 02138 USA Harvard Univ, Dept Chem & Biol Chem, Cambridge, MA 02138 USA

Lieber, CM
论文数: 0 引用数: 0
h-index: 0
机构:
Harvard Univ, Dept Chem & Biol Chem, Cambridge, MA 02138 USA Harvard Univ, Dept Chem & Biol Chem, Cambridge, MA 02138 USA
[4]
Failure of the vapor-liquid-solid mechanism in Au-assisted MOVPE growth of InAs nanowires
[J].
Dick, KA
;
Deppert, K
;
Mårtensson, T
;
Mandl, B
;
Samuelson, L
;
Seifert, W
.
NANO LETTERS,
2005, 5 (04)
:761-764

Dick, KA
论文数: 0 引用数: 0
h-index: 0
机构: Lund Univ, S-22100 Lund, Sweden

论文数: 引用数:
h-index:
机构:

Mårtensson, T
论文数: 0 引用数: 0
h-index: 0
机构: Lund Univ, S-22100 Lund, Sweden

Mandl, B
论文数: 0 引用数: 0
h-index: 0
机构: Lund Univ, S-22100 Lund, Sweden

论文数: 引用数:
h-index:
机构:

Seifert, W
论文数: 0 引用数: 0
h-index: 0
机构: Lund Univ, S-22100 Lund, Sweden
[5]
Single-nanowire electrically driven lasers
[J].
Duan, XF
;
Huang, Y
;
Agarwal, R
;
Lieber, CM
.
NATURE,
2003, 421 (6920)
:241-245

Duan, XF
论文数: 0 引用数: 0
h-index: 0
机构: Harvard Univ, Dept Chem & Biol Chem, Cambridge, MA 02138 USA

论文数: 引用数:
h-index:
机构:

Agarwal, R
论文数: 0 引用数: 0
h-index: 0
机构: Harvard Univ, Dept Chem & Biol Chem, Cambridge, MA 02138 USA

Lieber, CM
论文数: 0 引用数: 0
h-index: 0
机构:
Harvard Univ, Dept Chem & Biol Chem, Cambridge, MA 02138 USA Harvard Univ, Dept Chem & Biol Chem, Cambridge, MA 02138 USA
[6]
FUNDAMENTAL ASPECTS OF VLS GROWTH
[J].
GIVARGIZOV, EI
.
JOURNAL OF CRYSTAL GROWTH,
1975, 31 (DEC)
:20-30

GIVARGIZOV, EI
论文数: 0 引用数: 0
h-index: 0
机构:
ACAD SCI USSR,CRYSTALLOG INST,MOSCOW 117333,USSR ACAD SCI USSR,CRYSTALLOG INST,MOSCOW 117333,USSR
[7]
GAAS FREESTANDING QUANTUM-SIZE WIRES
[J].
HIRUMA, K
;
YAZAWA, M
;
HARAGUCHI, K
;
OGAWA, K
;
KATSUYAMA, T
;
KOGUCHI, M
;
KAKIBAYASHI, H
.
JOURNAL OF APPLIED PHYSICS,
1993, 74 (05)
:3162-3171

HIRUMA, K
论文数: 0 引用数: 0
h-index: 0
机构: Central Research Laboratory, Hitachi Ltd., Kokubunji

YAZAWA, M
论文数: 0 引用数: 0
h-index: 0
机构: Central Research Laboratory, Hitachi Ltd., Kokubunji

HARAGUCHI, K
论文数: 0 引用数: 0
h-index: 0
机构: Central Research Laboratory, Hitachi Ltd., Kokubunji

OGAWA, K
论文数: 0 引用数: 0
h-index: 0
机构: Central Research Laboratory, Hitachi Ltd., Kokubunji

KATSUYAMA, T
论文数: 0 引用数: 0
h-index: 0
机构: Central Research Laboratory, Hitachi Ltd., Kokubunji

KOGUCHI, M
论文数: 0 引用数: 0
h-index: 0
机构: Central Research Laboratory, Hitachi Ltd., Kokubunji

KAKIBAYASHI, H
论文数: 0 引用数: 0
h-index: 0
机构: Central Research Laboratory, Hitachi Ltd., Kokubunji
[8]
Controlled growth of Si nanowire arrays for device integration
[J].
Hochbaum, AI
;
Fan, R
;
He, RR
;
Yang, PD
.
NANO LETTERS,
2005, 5 (03)
:457-460

Hochbaum, AI
论文数: 0 引用数: 0
h-index: 0
机构: Univ Calif Berkeley, Dept Chem, Berkeley, CA 94720 USA

Fan, R
论文数: 0 引用数: 0
h-index: 0
机构: Univ Calif Berkeley, Dept Chem, Berkeley, CA 94720 USA

He, RR
论文数: 0 引用数: 0
h-index: 0
机构: Univ Calif Berkeley, Dept Chem, Berkeley, CA 94720 USA

Yang, PD
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Calif Berkeley, Dept Chem, Berkeley, CA 94720 USA Univ Calif Berkeley, Dept Chem, Berkeley, CA 94720 USA
[9]
Room-temperature ultraviolet nanowire nanolasers
[J].
Huang, MH
;
Mao, S
;
Feick, H
;
Yan, HQ
;
Wu, YY
;
Kind, H
;
Weber, E
;
Russo, R
;
Yang, PD
.
SCIENCE,
2001, 292 (5523)
:1897-1899

Huang, MH
论文数: 0 引用数: 0
h-index: 0
机构: Univ Calif Berkeley, Dept Chem, Berkeley, CA 94720 USA

Mao, S
论文数: 0 引用数: 0
h-index: 0
机构: Univ Calif Berkeley, Dept Chem, Berkeley, CA 94720 USA

Feick, H
论文数: 0 引用数: 0
h-index: 0
机构: Univ Calif Berkeley, Dept Chem, Berkeley, CA 94720 USA

Yan, HQ
论文数: 0 引用数: 0
h-index: 0
机构: Univ Calif Berkeley, Dept Chem, Berkeley, CA 94720 USA

Wu, YY
论文数: 0 引用数: 0
h-index: 0
机构: Univ Calif Berkeley, Dept Chem, Berkeley, CA 94720 USA

Kind, H
论文数: 0 引用数: 0
h-index: 0
机构: Univ Calif Berkeley, Dept Chem, Berkeley, CA 94720 USA

Weber, E
论文数: 0 引用数: 0
h-index: 0
机构: Univ Calif Berkeley, Dept Chem, Berkeley, CA 94720 USA

Russo, R
论文数: 0 引用数: 0
h-index: 0
机构: Univ Calif Berkeley, Dept Chem, Berkeley, CA 94720 USA

Yang, PD
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Calif Berkeley, Dept Chem, Berkeley, CA 94720 USA Univ Calif Berkeley, Dept Chem, Berkeley, CA 94720 USA
[10]
Compositional change near the mask edge in selective InGaAs growth by low-temperature MOCVD
[J].
Ida, M
;
Shigekawa, N
;
Furuta, T
;
Ito, H
;
Kobayashi, T
.
JOURNAL OF CRYSTAL GROWTH,
1996, 158 (04)
:437-442

Ida, M
论文数: 0 引用数: 0
h-index: 0
机构: NTT LSI Laboratories, Atsugi-shi, Kanagawa 243-01

Shigekawa, N
论文数: 0 引用数: 0
h-index: 0
机构: NTT LSI Laboratories, Atsugi-shi, Kanagawa 243-01

Furuta, T
论文数: 0 引用数: 0
h-index: 0
机构: NTT LSI Laboratories, Atsugi-shi, Kanagawa 243-01

Ito, H
论文数: 0 引用数: 0
h-index: 0
机构: NTT LSI Laboratories, Atsugi-shi, Kanagawa 243-01

Kobayashi, T
论文数: 0 引用数: 0
h-index: 0
机构: NTT LSI Laboratories, Atsugi-shi, Kanagawa 243-01