Influence of nanowire density on the shape and optical properties of ternary InGaAs nanowires

被引:206
作者
Kim, Y
Joyce, HJ
Gao, O
Tan, HH
Jagadish, C [1 ]
Paladugu, M
Zou, J
Suvorova, AA
机构
[1] Australian Natl Univ, Res Sch Phys Sci & Engn, Dept Elect Mat Engn, Canberra, ACT 0200, Australia
[2] Dong A Univ, Dept Phys, Pusan 604714, South Korea
[3] Univ Queensland, Sch Engn, Brisbane, Qld 4072, Australia
[4] Univ Queensland, Ctr Microscopy & Microanal, Brisbane, Qld 4072, Australia
[5] Univ Western Australia, Ctr Microscopy & Microanal, Crawley, WA 6009, Australia
关键词
D O I
10.1021/nl052189o
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We have synthesized ternary InGaAs nanowires on (111)B GaAs surfaces by metal-organic chemical vapor deposition. Au colloidal nanoparticles were employed to catalyze nanowire growth. We observed the strong influence of nanowire density on nanowire height, tapering, and base shape specific to the nanowires with high In composition. This dependency was attributed to the large difference of diffusion length on (111)B surfaces between In and Ga reaction species, with In being the more mobile species. Energy dispersive X-ray spectroscopy analysis together with high-resolution electron microscopy study of individual InGaAs nanowires shows large In/Ga compositional variation along the nanowire supporting the present diffusion model. Photoluminescence spectra exhibit a red shift with decreasing nanowire density due to the higher degree of In incorporation in more sparsely distributed InGaAs nanowires.
引用
收藏
页码:599 / 604
页数:6
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