Compositional change near the mask edge in selective InGaAs growth by low-temperature MOCVD

The compositional change and growth rate enhancement of InGaAs layers selectively grown by low-temperature metalorganic chemical vapor deposition are investigated. The selective area growth was performed at growth temperatures of 400 and 550 degrees C using the high-speed susceptor rotation technique, which can attain high selectivity at low temperature. The increase of indium content at the mask edge at 400 degrees C is approximately two times larger than that at 550 degrees C, though the growth rate enhancement is almost the same for both two temperatures. These results are compared with calculations made using a gas-phase diffusion model, and good agreement is obtained. The higher increase in indium content at 400 degrees C can be explained by the low adsorption rate of TEG molecules on the semiconductor surface.