SELECTIVE INGAAS GROWTH AT LOW-TEMPERATURE BY METALORGANIC CHEMICAL VAPOR-DEPOSITION (MOCVD) WITH HIGH-SPEED ROTATING SUSCEPTOR

The MOCVD method combined with a high-speed rotating susceptor is applied to the selective growth of compound semiconductors for the first time. It is found that the selectivity drastically improves as rotation speed is increased. Selective epitaxy of InGaAs at a very low temperature around 400-degrees-C can be successfully obtained. No polycrystal is observed on the 40 x 40 mum2 SiN(x) masks when the rotating speed is 1400 rpm. We contend that the improved selectivity is due to the high velocity of the gas flow just above the susceptor caused by its high rotation speed.