SELECTIVE EMBEDDED GROWTH OF GAINAS BY LOW-PRESSURE MOVPE

被引：15

作者：

KAYSER, O ^{[1
]}

OPITZ, B ^{[1
]}

WESTPHALEN, R ^{[1
]}

NIGGEBRUGGE, U ^{[1
]}

SCHNEIDER, K ^{[1
]}

机构：

[1] HEINRICH HERTZ INST NACHRICHTENTECH BERLIN GMBH,W-1000 BERLIN,GERMANY

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 107卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)90446-C

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The study reported on in this paper is concerned with selective low pressure (20 hPa) MOVPE of GaInAs and GaInAs/InP heterostructures at 940 K in etched recesses in partially masked substrates. Different growth behavior is obtained for the single layers of the ternary and binary/ternary heterostructures. Moreover, the shape of the recesses, which is related to the etching procedure, also affects the cross section of the deposited stripes. Proper choice of the shape of the recesses permits the growth of planar stripes. The feasibility of in-situ doping of the GaInAs stripes using H2S or DEZn is demonstrated.

引用

页码：141 / 146

页数：6

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