FABRICATION OF LATERAL PLANAR INP/GAINASP HETEROJUNCTION BIPOLAR-TRANSISTOR BY SELECTIVE AREA EPITAXIAL-GROWTH

被引：7

作者：

YOO, HJ

HAYES, JR

CANEAU, C

BHAT, R

KOZA, M

机构：

来源：

ELECTRONICS LETTERS | 1989年 / 25卷 / 03期

关键词：

D O I：

10.1049/el:19890138

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：191 / 192

页数：2

共 8 条

[1] OMCVD-GROWN INP/GAINAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

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SCHUMACHER, H ;

KOZA, M .

ELECTRONICS LETTERS, 1987, 23 (24) :1298-1299

[2]

KANBE H, 1984, IEEE ELECTR DEVICE L, V5, P172, DOI 10.1109/EDL.1984.25873

[3] HIGH-SPEED INGAAS(P) INP DOUBLE-HETEROSTRUCTURE BIPOLAR-TRANSISTORS [J].

NOTTENBURG, RN ;

BISCHOFF, JC ;

PANISH, MB ;

TEMKIN, H .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (06) :282-284

[4]

NOTTENBURG RN, 1987, IEEE ELECTRON DEV LE, V8, P284

[5] HIGH-SPEED SELF-ALIGNED INP/GALNAS DOUBLE HETEROSTRUCTURE BIPOLAR-TRANSISTOR WITH HIGH CURRENT-DRIVING CAPABILITY [J].

SCHUMACHER, H ;

SHANTHARAMA, LG ;

HAYES, JR ;

BHAT, R ;

ESAGUI, R ;

KOZA, M .

ELECTRONICS LETTERS, 1988, 24 (20) :1293-1294

[6] HIGH-CURRENT-GAIN INGAAS/INP DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY METAL ORGANIC VAPOR-PHASE EPITAXY [J].

SUGIURA, O ;

DENTAI, AG ;

JOYNER, CH ;

CHANDRASEKHAR, S ;

CAMPBELL, JC .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (05) :253-255

[7] INGAASP/INP LONG WAVELENGTH OPTOELECTRONIC INTEGRATED-CIRCUITS (OEICS) FOR HIGH-SPEED OPTICAL FIBER COMMUNICATION-SYSTEMS [J].

SUZUKI, A ;

KASAHARA, K ;

SHIKADA, M .

JOURNAL OF LIGHTWAVE TECHNOLOGY, 1987, 5 (10) :1479-1487

[8] VERTICAL INTEGRATION OF GAAS/ALGAAS LASER DIODE AND VERTICAL JFET [J].

YOO, HJ ;

KWON, YS .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1988, 27 (03) :L431-L433

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