VERTICAL INTEGRATION OF GAAS/ALGAAS LASER DIODE AND VERTICAL JFET

被引：4

作者：

YOO, HJ ^{[1
]}

KWON, YS ^{[1
]}

机构：

[1] KOREA ADV INST SCI & TECHNOL,DEPT ELECT ENGN,SEOUL 131,SOUTH KOREA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1988年 / 27卷 / 03期

关键词：

INTEGRATED CIRCUITS - TRANSISTORS; FIELD EFFECT;

D O I：

10.1143/JJAP.27.L431

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An embedded heterostructure laser and vertical JFET are integrated in a vertical configuration employing Zn diffusion and a selective liquid phase epitaxy method. The vertical JFET shares the current path with the laser, and can handle high power to effectively control the light output of the laser. Gate-voltage-controlled laser light output characteristics are demonstrated, and when V//D//S equals 4. 3 V, the modulation depth of the laser output is as large as 98% for the gate voltage of minus 4V.

引用

页码：L431 / L433

页数：3

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