VERY HIGH-FREQUENCY GAALAS LASER FIELD-EFFECT TRANSISTOR MONOLITHIC INTEGRATED-CIRCUIT

被引：30

作者：

URY, I ^{[1
]}

LAU, KY ^{[1
]}

BARCHAIM, N ^{[1
]}

YARIV, A ^{[1
]}

机构：

[1] CALTECH,PASADENA,CA 91125

来源：

APPLIED PHYSICS LETTERS | 1982年 / 41卷 / 02期

关键词：

D O I：

10.1063/1.93425

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：126 / 128

页数：3

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