INGAASP-INP HETEROJUNCTION PHOTOTRANSISTORS AND LIGHT AMPLIFIERS

[1] ALFEROV ZI, 1973, SOV PHYS SEMICOND+, V7, P780

[2] ARAI Y, 1970, OKI REV, V37, P65

[3] HIGH-GAIN WIDE-GAP-EMITTER GA1-XALXAS-GAAS PHOTOTRANSISTOR [J]. ELECTRONICS LETTERS, 1976, 12 (16) : 395 - 396

[4] GAAS-GAALAS PHOTOTRANSISTOR-LASER LIGHT AMPLIFIER [J]. ELECTRONICS LETTERS, 1980, 16 (15) : 602 - 603

[5] INOGUCHI T, 1969, SHARP TECH J, V8, P13

[6] AL0.5GA0.5AS-GAAS HETEROJUNCTION PHOTOTRANSISTORS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1979, 34 (09) : 562 - 564

[7] LIQUID-PHASE EPITAXIAL IN1-XGAXASYP1-Y LATTICE MATCHED TO (100) INP OVER COMPLETE WAVELENGTH RANGE 0.92 GREATER-THAN-LAMBDA-EQUAL-TO-1.65 MU-M [J]. APPLIED PHYSICS LETTERS, 1978, 33 (04) : 314 - 316

[8] SASAKI A, 1979, Patent No. 55107280

[9] HIGH-GAIN INGAASP-INP HETEROJUNCTION PHOTOTRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1980, 37 (02) : 192 - 194

[10] 500-HOUR CW OPERATION OF INGAASP-INP DOUBLE HETEROSTRUCTURE LASERS FABRICATED ON (100)-INP SUBSTRATES [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (09) : 1699 - 1700

[1] ALFEROV ZI, 1973, SOV PHYS SEMICOND+, V7, P780

[2] ARAI Y, 1970, OKI REV, V37, P65

[3] HIGH-GAIN WIDE-GAP-EMITTER GA1-XALXAS-GAAS PHOTOTRANSISTOR [J]. ELECTRONICS LETTERS, 1976, 12 (16) : 395 - 396

[4] GAAS-GAALAS PHOTOTRANSISTOR-LASER LIGHT AMPLIFIER [J]. ELECTRONICS LETTERS, 1980, 16 (15) : 602 - 603

[5] INOGUCHI T, 1969, SHARP TECH J, V8, P13

[6] AL0.5GA0.5AS-GAAS HETEROJUNCTION PHOTOTRANSISTORS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1979, 34 (09) : 562 - 564

[7] LIQUID-PHASE EPITAXIAL IN1-XGAXASYP1-Y LATTICE MATCHED TO (100) INP OVER COMPLETE WAVELENGTH RANGE 0.92 GREATER-THAN-LAMBDA-EQUAL-TO-1.65 MU-M [J]. APPLIED PHYSICS LETTERS, 1978, 33 (04) : 314 - 316

[8] SASAKI A, 1979, Patent No. 55107280

[9] HIGH-GAIN INGAASP-INP HETEROJUNCTION PHOTOTRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1980, 37 (02) : 192 - 194

[10] 500-HOUR CW OPERATION OF INGAASP-INP DOUBLE HETEROSTRUCTURE LASERS FABRICATED ON (100)-INP SUBSTRATES [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (09) : 1699 - 1700