EPITAXIAL-GROWTH ON INP SUBSTRATES ETCHED WITH METHANE REACTIVE ION ETCHING TECHNIQUE

被引：11

作者：

HENRY, L ^{[1
]}

VAUDRY, C ^{[1
]}

LECORRE, A ^{[1
]}

LECROSNIER, D ^{[1
]}

ALNOT, P ^{[1
]}

OLIVIER, J ^{[1
]}

机构：

[1] THOMSON CSF,LCR,F-91404 ORSAY,FRANCE

来源：

ELECTRONICS LETTERS | 1989年 / 25卷 / 18期

关键词：

D O I：

10.1049/el:19890843

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1257 / 1259

页数：3

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