GALNAS JUNCTION FET FULLY DRY ETCHED BY METAL ORGANIC REACTIVE ION ETCHING TECHNIQUE

被引：40

作者：

LECROSNIER, D

HENRY, L

LECORRE, A

VAUDRY, C

机构：

[1] CNET, Lannion, Fr, CNET, Lannion, Fr

来源：

ELECTRONICS LETTERS | 1987年 / 23卷 / 24期

关键词：

D O I：

10.1049/el:19870871

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

TRANSISTORS, FIELD EFFECT

引用

收藏

页码：1254 / 1255

页数：2

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YEATS, R
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[2] REACTIVE ION ETCHING OF GAAS USING A MIXTURE OF METHANE AND HYDROGEN
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[J]. ELECTRONICS LETTERS, 1987, 23 (16) : 857 - 859
[3] NOVEL PROCESS FOR INTEGRATION OF OPTOELECTRONIC DEVICES USING REACTIVE ION ETCHING WITHOUT CHLORINATED GAS
HENRY, L
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GRANJOUX, P
[J]. ELECTRONICS LETTERS, 1987, 23 (24) : 1253 - 1254
[4] NIGGEBRUGGE U, 1985, GAAS RELATED COMPOUN
[5] GAINAS JUNCTION FET WITH INP BUFFER LAYER PREPARED BY SELECTIVE ION-IMPLANTATION OF BE AND RAPID THERMAL ANNEALING
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[J]. ELECTRONICS LETTERS, 1986, 22 (06) : 313 - 315