GAINAS JUNCTION FET WITH INP BUFFER LAYER PREPARED BY SELECTIVE ION-IMPLANTATION OF BE AND RAPID THERMAL ANNEALING

被引：16

作者：

SELDERS, J

WACHS, HJ

JURGENSEN, H

机构：

来源：

ELECTRONICS LETTERS | 1986年 / 22卷 / 06期

关键词：

D O I：

10.1049/el:19860215

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：313 / 315

页数：3

共 13 条

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[3] SELF-ALIGNED IN0.53GA0.47AS/SEMI-INSULATING/N+ INP JUNCTION FIELD-EFFECT TRANSISTORS [J].

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[4]

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[6]

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[7]

KAUMANNS R, 1982, I PHYS C SER, V63, P347

[8] INGAAS JUNCTION FETS WITH FREQUENCY LIMIT (MAG = 1) ABOVE 30 GHZ [J].

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ELECTRONICS LETTERS, 1985, 21 (10) :449-451

[9]

SELDERS J, 1984, 9TH EUR WORKSH ACT M

[10]

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