INGAAS JUNCTION FETS WITH FREQUENCY LIMIT (MAG = 1) ABOVE 30 GHZ

[1] DIFFUSION IN III-V SEMICONDUCTORS FROM SPIN-ON FILM SOURCES [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1984, 17 (03) : 443 - +

[2] SATURATION VELOCITY DETERMINATION FOR IN0.53GA0.47AS FIELD-EFFECT TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1981, 38 (10) : 817 - 819

[3] TEMPERATURE-DEPENDENCE OF PEAK DRIFT VELOCITY AND THRESHOLD FIELD IN N-IN0.53GA0.47AS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (12) : 1918 - 1919

[4] IN0.53 GA0.47 AS SUBMICROMETER FETS GROWN BY MBE [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (07) : 252 - 254

[5] SILICON-OXIDE ENHANCED SCHOTTKY GATE IN0.53GA0.47AS FETS WITH A SELF-ALIGNED RECESSED GATE STRUCTURE [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (12) : 511 - 514

[6] SUBMICROMETER SELF-ALIGNED RECESSED GATE INGAAS MISFET EXHIBITING VERY HIGH TRANSCONDUCTANCE [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (05) : 169 - 171

[7] DAMBKES H, 1984, IEEE T ELECTRON DEV, V31, P1032

[8] DAMBKES H, 1984, SPRINGER SERIES SOLI, V53

[9] KONIG U, UNPUB J ELECTRON MAT

[10] LEHENY RF, 1981, P INT ELECTRON DEVIC, P276

[1] DIFFUSION IN III-V SEMICONDUCTORS FROM SPIN-ON FILM SOURCES [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1984, 17 (03) : 443 - +

[2] SATURATION VELOCITY DETERMINATION FOR IN0.53GA0.47AS FIELD-EFFECT TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1981, 38 (10) : 817 - 819

[3] TEMPERATURE-DEPENDENCE OF PEAK DRIFT VELOCITY AND THRESHOLD FIELD IN N-IN0.53GA0.47AS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (12) : 1918 - 1919

[4] IN0.53 GA0.47 AS SUBMICROMETER FETS GROWN BY MBE [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (07) : 252 - 254

[5] SILICON-OXIDE ENHANCED SCHOTTKY GATE IN0.53GA0.47AS FETS WITH A SELF-ALIGNED RECESSED GATE STRUCTURE [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (12) : 511 - 514

[6] SUBMICROMETER SELF-ALIGNED RECESSED GATE INGAAS MISFET EXHIBITING VERY HIGH TRANSCONDUCTANCE [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (05) : 169 - 171

[7] DAMBKES H, 1984, IEEE T ELECTRON DEV, V31, P1032

[8] DAMBKES H, 1984, SPRINGER SERIES SOLI, V53

[9] KONIG U, UNPUB J ELECTRON MAT

[10] LEHENY RF, 1981, P INT ELECTRON DEVIC, P276