SUBMICROMETER SELF-ALIGNED RECESSED GATE INGAAS MISFET EXHIBITING VERY HIGH TRANSCONDUCTANCE

被引：14

作者：

CHENG, CL ^{[1
]}

LIAO, ASH ^{[1
]}

CHANG, TY ^{[1
]}

LEHENY, RF ^{[1
]}

COLDREN, LA ^{[1
]}

LALEVIC, B ^{[1
]}

机构：

[1] RUTGERS STATE UNIV, DEPT ELECT ENGN, PISCATAWAY, NJ 08854 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 1984年 / 5卷 / 05期

关键词：

D O I：

10.1109/EDL.1984.25872

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：169 / 171

页数：3

共 12 条

[1] SATURATION VELOCITY DETERMINATION FOR IN0.53GA0.47AS FIELD-EFFECT TRANSISTORS
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[J]. APPLIED PHYSICS LETTERS, 1981, 38 (10) : 817 - 819
[2] DOUBLE HETEROSTRUCTURE GA0.47IN0.53AS MESFETS WITH SUB-MICRON GATES
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OHNO, H
WOOD, CEC
EASTMAN, LF
[J]. ELECTRON DEVICE LETTERS, 1980, 1 (09): : 174 - 176
[3] IN0.53 GA0.47 AS SUBMICROMETER FETS GROWN BY MBE
CHAI, YG
YEATS, R
[J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (07) : 252 - 254
[4] JUNCTION FIELD-EFFECT TRANSISTORS USING IN0.53GA0.47AS MATERIAL GROWN BY MOLECULAR-BEAM EPITAXY
CHANG, TY
LEHENY, RF
NAHORY, RE
SILBERG, E
BALLMAN, AA
CARIDI, EA
HARROLD, CJ
[J]. ELECTRON DEVICE LETTERS, 1982, 3 (03): : 56 - 58
[5] GARDNER PD, 1981, RCA REV, V42, P542
[6] X-BAND SELF-ALIGNED GATE ENHANCEMENT-MODE INP MISFETS
ITOH, T
OHATA, K
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (07) : 811 - 815
[7] AN IN0.53GA0.47AS JUNCTION FIELD-EFFECT TRANSISTOR
LEHENY, RF
NAHORY, RE
POLLACK, MA
BALLMAN, AA
BEEBE, ED
DEWINTER, JC
MARTIN, RJ
[J]. ELECTRON DEVICE LETTERS, 1980, 1 (06): : 110 - 111
[8] VELOCITY-FIELD CHARACTERISTICS OF GA1-XINXP1-YASY QUATERNARY ALLOYS
LITTLEJOHN, MA
HAUSER, JR
GLISSON, TH
[J]. APPLIED PHYSICS LETTERS, 1977, 30 (05) : 242 - 244
[9] IN0.53GA0.47AS FETS WITH INSULATOR-ASSISTED SCHOTTKY GATES
OCONNOR, P
PEARSALL, TP
CHENG, KY
CHO, AY
HWANG, JCM
ALAVI, K
[J]. ELECTRON DEVICE LETTERS, 1982, 3 (03): : 64 - 66
[10] LIQUID-PHASE EPITAXIAL-GROWTH, ELECTRON-MOBILITY AND MAXIMUM DRIFT VELOCITY OF IN1-XGAXAS (X ALMOST EQUAL TO 0.5) FOR MICROWAVE DEVICES
SASAKI, A
TAKEDA, Y
SHIKAGAWA, N
TAKAGI, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 : 239 - 243

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