TEMPERATURE-DEPENDENCE OF PEAK DRIFT VELOCITY AND THRESHOLD FIELD IN N-IN0.53GA0.47AS

被引：1

作者：

BHATTACHARYYA, A

GHOSAL, A

CHATTOPADHYAY, D

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1984年 / 31卷 / 12期

关键词：

D O I：

10.1109/T-ED.1984.21816

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：1918 / 1919

页数：2

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