TRANSFERRED-ELECTRON DOMAINS IN IN0.53GA0.47AS IN DEPENDENCE ON THE THE NL-PRODUCT

被引：26

作者：

KOWALSKY, W

SCHLACHETZKI, A

WEHMANN, HH

机构：

来源：

关键词：

D O I：

10.1016/0038-1101(84)90110-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：187 / 189

页数：3

共 8 条

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[3] PULSE GENERATION IN PLANAR GUNN DEVICES WITH VARYING NL PRODUCT [J].

HEIME, K ;

SCHLACHETZKI, A .

[4] TRANSFERRED-ELECTRON EFFECT IN IN0.53GA0.47AS [J].

KOWALSKY, W ;

SCHLACHETZKI, A .

[5]

MARSH JH, 1981, I PHYS C SER, V56, P621

REISER, M .

[7] ANATOMY OF TRANSFERRED-ELECTRON EFFECT IN III-V SEMICONDUCTORS [J].

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[8]

WINDHORN TH, 1982, J ELECTRON MATER, V11, P1065, DOI 10.1007/BF02658917