SILICON-OXIDE ENHANCED SCHOTTKY GATE IN0.53GA0.47AS FETS WITH A SELF-ALIGNED RECESSED GATE STRUCTURE

被引：7

作者：

CHENG, CL ^{[1
]}

LIAO, ASH ^{[1
]}

CHANG, TY ^{[1
]}

CARIDI, EA ^{[1
]}

COLDREN, LA ^{[1
]}

LALEVIC, B ^{[1
]}

机构：

[1] RUTGERS STATE UNIV, DEPT ELECT ENGN, PISCATAWAY, NJ 08854 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 1984年 / 5卷 / 12期

关键词：

D O I：

10.1109/EDL.1984.26008

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：511 / 514

页数：4

共 11 条

[1] SATURATION VELOCITY DETERMINATION FOR IN0.53GA0.47AS FIELD-EFFECT TRANSISTORS
BANDY, S
NISHIMOTO, C
HYDER, S
HOOPER, C
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (10) : 817 - 819
[2] DOUBLE HETEROSTRUCTURE GA0.47IN0.53AS MESFETS WITH SUB-MICRON GATES
BARNARD, J
OHNO, H
WOOD, CEC
EASTMAN, LF
[J]. ELECTRON DEVICE LETTERS, 1980, 1 (09): : 174 - 176
[3] IN0.53 GA0.47 AS SUBMICROMETER FETS GROWN BY MBE
CHAI, YG
YEATS, R
[J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (07) : 252 - 254
[4] JUNCTION FIELD-EFFECT TRANSISTORS USING IN0.53GA0.47AS MATERIAL GROWN BY MOLECULAR-BEAM EPITAXY
CHANG, TY
LEHENY, RF
NAHORY, RE
SILBERG, E
BALLMAN, AA
CARIDI, EA
HARROLD, CJ
[J]. ELECTRON DEVICE LETTERS, 1982, 3 (03): : 56 - 58
[5] SHORT CHANNEL GA0.47IN0.53AS/AL0.48IN0.52AS SELECTIVELY DOPED FIELD-EFFECT TRANSISTORS
CHEN, CY
CHO, AY
ALAVI, K
GARBINSKI, PA
[J]. ELECTRON DEVICE LETTERS, 1982, 3 (08): : 205 - 208
[6] SUBMICROMETER SELF-ALIGNED RECESSED GATE INGAAS MISFET EXHIBITING VERY HIGH TRANSCONDUCTANCE
CHENG, CL
LIAO, ASH
CHANG, TY
LEHENY, RF
COLDREN, LA
LALEVIC, B
[J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (05) : 169 - 171
[7] GARDNER PD, 1983, P I PHYS C SER, V65, P399
[8] INTEGRATED IN0.53GA0.47AS P-I-N FET PHOTORECEIVER
LEHENY, RF
NAHORY, RE
POLLACK, MA
BALLMAN, AA
BEEBE, ED
DEWINTER, JC
MARTIN, RJ
[J]. ELECTRONICS LETTERS, 1980, 16 (10) : 353 - 355
[9] STUDY OF HIGH-SPEED NORMALLY OFF AND NORMALLY ON AI0.5GA0.5AS HETEROJUNCTION GATE GAAS FETS (HJFET)
MORKOC, H
BANDY, SG
SANKARAN, R
ANTYPAS, GA
BELL, RL
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (06) : 619 - 627
[10] IN0.53GA0.47AS FETS WITH INSULATOR-ASSISTED SCHOTTKY GATES
OCONNOR, P
PEARSALL, TP
CHENG, KY
CHO, AY
HWANG, JCM
ALAVI, K
[J]. ELECTRON DEVICE LETTERS, 1982, 3 (03): : 64 - 66

← 1 2 →