SHORT CHANNEL GA0.47IN0.53AS/AL0.48IN0.52AS SELECTIVELY DOPED FIELD-EFFECT TRANSISTORS

[1] DEPLETION MODE MODULATION DOPED AL0.48IN0.52AS-GA0.47IN0.53AS HETEROJUNCTION FIELD-EFFECT TRANSISTORS [J]. ELECTRON DEVICE LETTERS, 1982, 3 (06): : 152 - 155

[2] ELECTRON MOBILITIES IN MODULATION DOPED GA0.47IN0.53AS/AL0.48IN0.52AS HETEROJUNCTIONS GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1982, 40 (02) : 147 - 149

[3] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[4] TWO-DIMENSIONAL ELECTRON-GAS MESFET STRUCTURE [J]. ELECTRONICS LETTERS, 1980, 16 (17) : 667 - 668

[5] SPECTRAL LOSSES OF LOW-OH-CONTENT OPTICAL FIBERS [J]. ELECTRONICS LETTERS, 1976, 12 (12) : 310 - 312

[6] JUDAPRAWIRA S, 1981, ELECTRON DEVIC LETT, V2, P14

[7] LOW-NOISE NORMALLY ON AND NORMALLY OFF TWO-DIMENSIONAL ELECTRON-GAS FIELD-EFFECT TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1982, 40 (06) : 530 - 532

[8] VELOCITY-FIELD CHARACTERISTICS OF GA1-XINXP1-YASY QUATERNARY ALLOYS [J]. APPLIED PHYSICS LETTERS, 1977, 30 (05) : 242 - 244

[9] A NEW FIELD-EFFECT TRANSISTOR WITH SELECTIVELY DOPED GAAS-N-ALXGA1-XAS HETEROJUNCTIONS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (05) : L225 - L227

[10] ZERO MATERIAL DISPERSION IN OPTICAL FIBERS [J]. ELECTRONICS LETTERS, 1975, 11 (08) : 176 - 178

[1] DEPLETION MODE MODULATION DOPED AL0.48IN0.52AS-GA0.47IN0.53AS HETEROJUNCTION FIELD-EFFECT TRANSISTORS [J]. ELECTRON DEVICE LETTERS, 1982, 3 (06): : 152 - 155

[2] ELECTRON MOBILITIES IN MODULATION DOPED GA0.47IN0.53AS/AL0.48IN0.52AS HETEROJUNCTIONS GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1982, 40 (02) : 147 - 149

[3] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[4] TWO-DIMENSIONAL ELECTRON-GAS MESFET STRUCTURE [J]. ELECTRONICS LETTERS, 1980, 16 (17) : 667 - 668

[5] SPECTRAL LOSSES OF LOW-OH-CONTENT OPTICAL FIBERS [J]. ELECTRONICS LETTERS, 1976, 12 (12) : 310 - 312

[6] JUDAPRAWIRA S, 1981, ELECTRON DEVIC LETT, V2, P14

[7] LOW-NOISE NORMALLY ON AND NORMALLY OFF TWO-DIMENSIONAL ELECTRON-GAS FIELD-EFFECT TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1982, 40 (06) : 530 - 532

[8] VELOCITY-FIELD CHARACTERISTICS OF GA1-XINXP1-YASY QUATERNARY ALLOYS [J]. APPLIED PHYSICS LETTERS, 1977, 30 (05) : 242 - 244

[9] A NEW FIELD-EFFECT TRANSISTOR WITH SELECTIVELY DOPED GAAS-N-ALXGA1-XAS HETEROJUNCTIONS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (05) : L225 - L227

[10] ZERO MATERIAL DISPERSION IN OPTICAL FIBERS [J]. ELECTRONICS LETTERS, 1975, 11 (08) : 176 - 178