INVESTIGATION OF IN0.53GA0.47AS FOR HIGH-FREQUENCY MICROWAVE-POWER FETS

[1] SATURATION VELOCITY DETERMINATION FOR IN0.53GA0.47AS FIELD-EFFECT TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1981, 38 (10) : 817 - 819

[2] BROWN AS, 1983, ELECT MATER C

[3] IN0.53 GA0.47 AS SUBMICROMETER FETS GROWN BY MBE [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (07) : 252 - 254

[4] JUNCTION FIELD-EFFECT TRANSISTORS USING IN0.53GA0.47AS MATERIAL GROWN BY MOLECULAR-BEAM EPITAXY [J]. ELECTRON DEVICE LETTERS, 1982, 3 (03): : 56 - 58

[5] CHEN CY, 1980, IEEE ELECTRON DEVICE, V3, P15

[6] SUBMICROMETER SELF-ALIGNED RECESSED GATE INGAAS MISFET EXHIBITING VERY HIGH TRANSCONDUCTANCE [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (05) : 169 - 171

[7] Davies Glyn, COMMUNICATION

[8] HIGH-SPEED PHOTOCONDUCTIVE DETECTORS USING GAINAS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) : 269 - 272

[9] AN IN0.53GA0.47AS JUNCTION FIELD-EFFECT TRANSISTOR [J]. ELECTRON DEVICE LETTERS, 1980, 1 (06): : 110 - 111

[10] LEHENY RF, 1981, I PHYS C SER, V56, P511

[1] SATURATION VELOCITY DETERMINATION FOR IN0.53GA0.47AS FIELD-EFFECT TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1981, 38 (10) : 817 - 819

[2] BROWN AS, 1983, ELECT MATER C

[3] IN0.53 GA0.47 AS SUBMICROMETER FETS GROWN BY MBE [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (07) : 252 - 254

[4] JUNCTION FIELD-EFFECT TRANSISTORS USING IN0.53GA0.47AS MATERIAL GROWN BY MOLECULAR-BEAM EPITAXY [J]. ELECTRON DEVICE LETTERS, 1982, 3 (03): : 56 - 58

[5] CHEN CY, 1980, IEEE ELECTRON DEVICE, V3, P15

[6] SUBMICROMETER SELF-ALIGNED RECESSED GATE INGAAS MISFET EXHIBITING VERY HIGH TRANSCONDUCTANCE [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (05) : 169 - 171

[7] Davies Glyn, COMMUNICATION

[8] HIGH-SPEED PHOTOCONDUCTIVE DETECTORS USING GAINAS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) : 269 - 272

[9] AN IN0.53GA0.47AS JUNCTION FIELD-EFFECT TRANSISTOR [J]. ELECTRON DEVICE LETTERS, 1980, 1 (06): : 110 - 111

[10] LEHENY RF, 1981, I PHYS C SER, V56, P511