SELECTIVE AREA GROWTH OF INGAASP BY OMVPE

被引：27

作者：

KIM, MS ^{[1
]}

CANEAU, C ^{[1
]}

COLAS, E ^{[1
]}

BHAT, R ^{[1
]}

机构：

[1] KOREA INST SCI & TECHNOL,SEOUL 130560,SOUTH KOREA

来源：

JOURNAL OF CRYSTAL GROWTH | 1992年 / 123卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(92)90011-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We investigated the selective area growth of lambda = 1.3 mum InGaAsP by low pressure OMVPE, and compared it with the selective growth behavior of InP, InGaAs, and InGaP. We found that, for all three alloys, the In content increased with decreasing stripe opening width. The growth rate enhancement is similar for InGaAsP, InGaAs, and InGaP, while it is somewhat higher for InP. Growth spikes at the stripe opening edges could be seen in the case of InP and InGaAsP, while InGaAs and InGaP did not exhibit such spikes.

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页码：69 / 74

页数：6

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