SELECTIVE OMVPE OF GAINAS AND INP USING A POLYCRYSTALLINE INP MASK

被引：7

作者：

CANEAU, C

BHAT, R

FREI, MR

SCHWARZ, SA

BONNER, WA

KOZA, MA

机构：

[1] Bellcore, Red Bank, NJ 07701-7040

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 114卷 / 03期

关键词：

D O I：

10.1016/0022-0248(91)90062-A

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

InP and GaInAs were deposited on InP, by low pressure organometallic vapor phase epitaxy, in stripes opened in a layer of polycrystalline InP. Using polycrystalline InP as a mask eliminates growth spikes at the edge of the mask, and there is little (for GaInAs) or no (for InP) growth rate enhancement compared to growth on unmasked substrates. There is, however, a strong shift in the composition of GaInAs, the In mole fraction being much lower than for unmasked substrates. We explain this phenomenon by studying the difference of incorporation of In and Ga on substrates of different crystallographic orientations.

引用

页码：481 / 485

页数：5

共 6 条

[1] ORIENTATION DEPENDENCE OF S, ZN, SI, TE, AND SN DOPING IN OMCVD GROWTH OF INP AND GAAS - APPLICATION TO DH LASERS AND LATERAL P-N-JUNCTION ARRAYS GROWN ON NONPLANAR SUBSTRATES [J].