A NOVEL METHOD OF SELECTIVE EPITAXIAL-GROWTH OF INP BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：9

作者：

WAKAHARA, A

PAK, K

YAMADA, H

YOSHIDA, A

NAKAMURA, T

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 04期

关键词：

D O I：

10.1063/1.339682

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1284 / 1286

页数：3

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