SELECTED AREA GROWTH OF INP BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION ON ION-IMPLANTED INP SUBSTRATES

被引：15

作者：

FAVENNEC, PN ^{[1
]}

SALVI, M ^{[1
]}

POISSON, MAD ^{[1
]}

DUCHEMIN, JP ^{[1
]}

机构：

[1] THOMSON CSF,CENT RECH LAB,F-91401 ORSAY,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1983年 / 43卷 / 08期

关键词：

D O I：

10.1063/1.94475

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：771 / 773

页数：3

共 9 条

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[2]

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[3] SELECTED-AREA MOLECULAR-BEAM EPITAXY ON ION-IMPLANTED GAAS SUBSTRATES [J].

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[4] LATERAL EPITAXIAL OVERGROWTH OF GAAS BY ORGANO-METALLIC CHEMICAL VAPOR-DEPOSITION [J].

GALE, RP ;

MCCLELLAND, RW ;

FAN, JCC ;

BOZLER, CO .

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[5] A NEW APPROACH TO THE GETTERING OF OXYGEN DURING THE GROWTH OF GAALAS BY LOW-PRESSURE MOCVD [J].

HERSEE, SD ;

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DUCHEMIN, JP .

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[6] A NOVEL TECHNIQUE FOR GALNASP/INP BURIED HETEROSTRUCTURE LASER FABRICATION [J].

LIAU, ZL ;

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APPLIED PHYSICS LETTERS, 1982, 40 (07) :568-570

[7] A TECHNIQUE FOR PRODUCING EPITAXIAL-FILMS ON REUSEABLE SUBSTRATES [J].

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APPLIED PHYSICS LETTERS, 1980, 37 (06) :560-562

[8]

POISSON MAD, 1980, I PHYS C SER, V56, P73

[9]

RAZHEGI M, 1982, ELECTRON LETT, V18, P339

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