SELECTED-AREA MOLECULAR-BEAM EPITAXY ON ION-IMPLANTED GAAS SUBSTRATES

被引：11

作者：

FAVENNEC, PN

HENRY, L

REGRENY, A

SALVI, M

机构：

来源：

ELECTRONICS LETTERS | 1982年 / 18卷 / 21期

关键词：

D O I：

10.1049/el:19820636

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：933 / 935

页数：3

相关论文

共 4 条

[1] GAAS INTEGRATED-CIRCUITS BY SELECTED-AREA MOLECULAR-BEAM EPITAXY [J].

METZE, GM ;

LEVY, HM ;

WOODARD, DW ;

WOOD, CEC ;

EASTMAN, LF .

APPLIED PHYSICS LETTERS, 1980, 37 (07) :628-630

[2] GROWTH OF GAAS-GA1-XALXAS OVER PREFERENTIALLY ETCHED CHANNELS BY MOLECULAR-BEAM EPITAXY - TECHNIQUE FOR 2-DIMENSIONAL THIN-FILM DEFINITION [J].

TSANG, WT ;

CHO, AY .

APPLIED PHYSICS LETTERS, 1977, 30 (06) :293-296

[3] SELECTIVE AREA GROWTH OF GAAS/ALXGA1-XAS MULTILAYER STRUCTURES WITH MOLECULAR-BEAM EPITAXY USING SI SHADOW MASKS [J].

TSANG, WT ;

ILEGEMS, M .

APPLIED PHYSICS LETTERS, 1977, 31 (04) :301-304

[4] MOLECULAR-BEAM EPITAXIAL WRITING OF PATTERNED GAAS EPILAYER STRUCTURES [J].

TSANG, WT ;

CHO, AY .

APPLIED PHYSICS LETTERS, 1978, 32 (08) :491-493