GAAS INTEGRATED-CIRCUITS BY SELECTED-AREA MOLECULAR-BEAM EPITAXY

被引：22

作者：

METZE, GM ^{[1
]}

LEVY, HM ^{[1
]}

WOODARD, DW ^{[1
]}

WOOD, CEC ^{[1
]}

EASTMAN, LF ^{[1
]}

机构：

[1] CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853

来源：

APPLIED PHYSICS LETTERS | 1980年 / 37卷 / 07期

关键词：

D O I：

10.1063/1.92000

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：628 / 630

页数：3

共 8 条

[1]

BALLAMY WC, 1976, IEEE T ELECTRON DEVI, V4, P481

[2]

Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[3] GAAS PLANAR TECHNOLOGY BY MOLECULAR-BEAM EPITAXY (MBE) [J].

CHO, AY ;

BALLAMY, WC .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (02) :783-785

[4]

HALLAIS J, 1979, 1978 GAAS RELATED CO, P36

[5] LATERAL DEFINITION OF MONO-CRYSTALLINE GAAS PREPARED BY MOLECULAR-BEAM EPITAXY [J].

HIYAMIZU, S ;

NANBU, K ;

FUJII, T ;

SAKURAI, T ;

HASHIMOTO, H ;

RYUZAN, O .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (07) :1562-1567

[6] ROOM TEMPERATURE CHEMICAL POLISHING OF GE AND GAAS [J].

REISMAN, A ;

ROHR, R .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (12) :1425-1428

[7] COMPLEX FREE-CARRIER PROFILE SYNTHESIS BY ATOMIC-PLANE DOPING OF MBE GAAS [J].

WOOD, CEC ;

METZE, G ;

BERRY, J ;

EASTMAN, LF .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) :383-387

[8] SURFACE EXCHANGE DOPING OF MBE GAAS FROM S AND SE CAPTIVE SOURCES [J].

WOOD, CEC .

APPLIED PHYSICS LETTERS, 1978, 33 (08) :770-772

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