SURFACE EXCHANGE DOPING OF MBE GAAS FROM S AND SE CAPTIVE SOURCES

[1] MOLECULAR-BEAM EPITAXY (MBE) OF IN1-XGAXAS AND GASB1-YASY [J]. APPLIED PHYSICS LETTERS, 1977, 31 (11) : 759 - 761

[2] CHANG LL, EPITAXIAL GROWTH A, P37

[3] IMPURITY PROFILES OF GAAS EPITAXIAL LAYERS DOPED WITH SN, SI, AND GE GROWN WITH MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (04) : 1733 - 1735

[4] BACK-SURFACE EMITTING GAASXSB1-XLEDS(LAMBDA=1.0MUM) PREPARED BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1977, 30 (08) : 397 - 399

[5] CHO AY, PROGR SOLID STATE CH, V10

[6] CHO AY, COMMUNICATION

[7] INSITU CHARACTERIZATION OF MBE GROWN GAAS AND ALXGA1-XAS FILMS USING RHEED, SIMS, AND AES TECHNIQUES [J]. APPLIED PHYSICS, 1977, 13 (02): : 111 - 121

[8] WOOD CB, UNPUBLISHED

[9] MOLECULAR-BEAM EPITAXIAL GAAS LAYERS FOR MESFETS [J]. APPLIED PHYSICS LETTERS, 1976, 29 (11) : 746 - 748

[10] WOOD CEC, 1978, P BIENNIAL C GAAS RE

[1] MOLECULAR-BEAM EPITAXY (MBE) OF IN1-XGAXAS AND GASB1-YASY [J]. APPLIED PHYSICS LETTERS, 1977, 31 (11) : 759 - 761

[2] CHANG LL, EPITAXIAL GROWTH A, P37

[3] IMPURITY PROFILES OF GAAS EPITAXIAL LAYERS DOPED WITH SN, SI, AND GE GROWN WITH MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (04) : 1733 - 1735

[4] BACK-SURFACE EMITTING GAASXSB1-XLEDS(LAMBDA=1.0MUM) PREPARED BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1977, 30 (08) : 397 - 399

[5] CHO AY, PROGR SOLID STATE CH, V10

[6] CHO AY, COMMUNICATION

[7] INSITU CHARACTERIZATION OF MBE GROWN GAAS AND ALXGA1-XAS FILMS USING RHEED, SIMS, AND AES TECHNIQUES [J]. APPLIED PHYSICS, 1977, 13 (02): : 111 - 121

[8] WOOD CB, UNPUBLISHED

[9] MOLECULAR-BEAM EPITAXIAL GAAS LAYERS FOR MESFETS [J]. APPLIED PHYSICS LETTERS, 1976, 29 (11) : 746 - 748

[10] WOOD CEC, 1978, P BIENNIAL C GAAS RE