LATERAL EPITAXIAL OVERGROWTH OF GAAS BY ORGANO-METALLIC CHEMICAL VAPOR-DEPOSITION

[1] SELECTIVE MOCVD EPITAXY FOR OPTOELECTRONIC DEVICES [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 229 - 234

[2] DEPOSITION OF III-V COMPOUNDS BY MO-CVD AND IN HALOGEN TRANSPORT-SYSTEMS - A CRITICAL COMPARISON [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 35 - 41

[3] DEVICE QUALITY EPITAXIAL GALLIUM-ARSENIDE GROWN BY METAL ALKYL-HYDRIDE TECHNIQUE [J]. JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) : 172 - 178

[4] SINGLE-CRYSTAL GAAS FILMS ON AMORPHOUS SUBSTRATES BY THE CLEFT PROCESS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03): : 720 - 725

[5] FABRICATION AND NUMERICAL-SIMULATION OF THE PERMEABLE BASE TRANSISTOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) : 1128 - 1141

[6] BOZLER CO, 1981, 8TH P INT S GALL ARS, P283

[7] HIGH-EFFICIENCY GAALAS-GAAS HETEROSTRUCTURE SOLAR-CELLS GROWN BY METALLO-ORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1977, 31 (03) : 201 - 203

[8] Fan J. C. C., 1981, Fifteenth IEEE Photovoltaic Specialists Conference - 1981, P666

[9] LEONBERGER FJ, 1980, INTEGRATED GUIDED WA, P28

[10] A TECHNIQUE FOR PRODUCING EPITAXIAL-FILMS ON REUSEABLE SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1980, 37 (06) : 560 - 562

[1] SELECTIVE MOCVD EPITAXY FOR OPTOELECTRONIC DEVICES [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 229 - 234

[2] DEPOSITION OF III-V COMPOUNDS BY MO-CVD AND IN HALOGEN TRANSPORT-SYSTEMS - A CRITICAL COMPARISON [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 35 - 41

[3] DEVICE QUALITY EPITAXIAL GALLIUM-ARSENIDE GROWN BY METAL ALKYL-HYDRIDE TECHNIQUE [J]. JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) : 172 - 178

[4] SINGLE-CRYSTAL GAAS FILMS ON AMORPHOUS SUBSTRATES BY THE CLEFT PROCESS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03): : 720 - 725

[5] FABRICATION AND NUMERICAL-SIMULATION OF THE PERMEABLE BASE TRANSISTOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) : 1128 - 1141

[6] BOZLER CO, 1981, 8TH P INT S GALL ARS, P283

[7] HIGH-EFFICIENCY GAALAS-GAAS HETEROSTRUCTURE SOLAR-CELLS GROWN BY METALLO-ORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1977, 31 (03) : 201 - 203

[8] Fan J. C. C., 1981, Fifteenth IEEE Photovoltaic Specialists Conference - 1981, P666

[9] LEONBERGER FJ, 1980, INTEGRATED GUIDED WA, P28

[10] A TECHNIQUE FOR PRODUCING EPITAXIAL-FILMS ON REUSEABLE SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1980, 37 (06) : 560 - 562